ZXTN2010Z Zetex Semiconductors plc., ZXTN2010Z Datasheet

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ZXTN2010Z

Manufacturer Part Number
ZXTN2010Z
Description
60v Npn Low Saturation Medium Power Transistor In Sot89
Manufacturer
Zetex Semiconductors plc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTN2010ZTA
Manufacturer:
DIODES
Quantity:
4 000
Part Number:
ZXTN2010ZTA
Manufacturer:
ZETEX
Quantity:
20 000
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BV
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers
extremely low on state losses making it ideal for use in DC-DC circuits and various
driving and power management functions.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
851
ISSUE 2 - MAY 2006
DEVICE
ZXTN2010ZTA
Extremely low equivalent on-resistance; R
5 amps continuous current
Up to 20 amps peak current
Very low saturation voltages
Excellent h
Emergency lighting circuits
Motor driving (including DC fans)
Solenoid, relay and actuator drivers
DC-DC modules
Backlight inverters
Power switches
MOSFET gate drivers
CEO
= 60V : R
FE
characteristics up to 10 amps
SAT
= 30m ; I
REEL
SIZE
7”
embossed
C
WIDTH
12mm
TAPE
= 5A
SAT
QUANTITY PER
= 30mV at 6A
1,000 units
REEL
1
ZXTN2010Z
S E M I C O N D U C T O R S
TOP VIEW
PINOUT

Related parts for ZXTN2010Z

ZXTN2010Z Summary of contents

Page 1

... Power switches • MOSFET gate drivers ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXTN2010ZTA 7” 12mm embossed DEVICE MARKING 851 ISSUE 2 - MAY 2006 = 5A = 30mV at 6A SAT QUANTITY PER REEL 1,000 units 1 ZXTN2010Z PINOUT TOP VIEW ...

Page 2

... ZXTN2010Z ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage (a) Continuous collector current Peak pulse current (a) Power dissipation at T =25°C A Linear derating factor (b) Power dissipation at T =25°C A Linear derating factor Operating and storage temperature range THERMAL RESISTANCE PARAMETER (a) Junction to ambient ...

Page 3

... ISSUE 2 - MAY 2006 CHARACTERISTICS 3 ZXTN2010Z ...

Page 4

... ZXTN2010Z ELECTRICAL CHARACTERISTICS (at T PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio Transition frequency ...

Page 5

... ISSUE 2 - MAY 2006 TYPICAL CHARACTERISTICS 5 ZXTN2010Z ...

Page 6

... ZXTN2010Z PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 1.40 1.60 0.550 0.630 b 0.38 0.48 0.015 0.019 b1 - 0.53 - 0.021 b2 1.50 1.80 0.060 0.071 c 0.28 0.44 0.011 0.017 D 4.40 4.60 0.173 0.181 © Zetex Semiconductors plc 2005 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraß ...

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