2N6076-D75Z Fairchild Semiconductor, 2N6076-D75Z Datasheet
2N6076-D75Z
Manufacturer Part Number
2N6076-D75Z
Description
2n6076 Silicon Pnp Small Signal Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N6076-D75Z.pdf
(3 pages)
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
SYM
B
B
B
I
I
I
h
V
V
V
1998 Fairchild Semiconductor Corporation
TEMPERATURES
Storage Temperature
Operating Junction Temperature
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C
VOLTAGES & CURRENT
V
V
V
I
CBO
CES
EBO
FE
BV
h
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
SILICON PNP SMALL SIGNAL TRANSISTOR
VCBO
VCEO
VEBO
CE(
BE(
BE
C
FE
CEO
CBO
EBO
(on)
CEO
sat
sat
. . . . 100 (Min) @ V
)
)
. . . . 25 V (Min)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base -Emitter On Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Collector Current
CHARACTERISTICS
2N6076
CE
= 10 V, I
C
= 10 mA
-55 Degrees C to
MIN MAX
0.5
100
25
25
5
150 Degrees C
150 Degrees C
500 mA
625 mW
25 V
25 V
5 V
500
100
0.25
0.8
1.2
100
10
100
1
B
C
2
UNITS
3
E
nA
nA
uA
uA
V
V
V
V
V
V
1
I
I
I
V
V
V
V
V
I
I
V
DISCRETE POWER & SIGNAL
C
C
E
C
C
LOGO
2N
6076
(4.450 - 4.700)
TEST CONDITIONS
CB
CE
EB
CE
CE
CB
0.175 - 0.185
=
=
=
= 10mA I
= 10mA I
= 25 V
= 3.0 V
= 10 V
= 25 V
= 25 V , T=+100°C
= 10 V
2
XYY
10 mA
100 uA
10 uA
TECHNOLOGIES
3
I
I
C
(2.413 - 2.667)
C
0.095 - 0.105
B
B
2n6076.ppt6894 revA
= 10mA
= 10 mA
= 1.0mA
= 1.0mA
(3.429 - 3.683)
0.135 - 0.145
(12.70)
(4.450 - 4.700)
0.500
0.175 - 0.185
(0.410- 0.533)
0.016 - 0.021
(1.143- 1.397)
0.045 - 0.055
MIN
SEATING
PLANE
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2N6076-D75Z Summary of contents
Page 1
... 10mA 10mA 0.135 - 0.145 (3.429 - 3.683) 0.175 - 0.185 (4.450 - 4.700) SEATING PLANE 0.500 MIN (12.70) 0.016 - 0.021 (0.410- 0.533) 0.045 - 0.055 (1.143- 1.397 1.0mA = 1.0mA = 10mA 2n6076.ppt6894 revA ...
Page 2
... SILICON PNP SMALL SIGNAL TRANSISTOR ELECTRICAL CHARACTERISTICS Con’t (25 Degrees C Ambient Temperature unless otherwise stated) SYM CHARACTERISTICS C Output Capacitance cb hfe Small Signal Current Gain NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...