2N5306-D74Z Fairchild Semiconductor, 2N5306-D74Z Datasheet
2N5306-D74Z
Manufacturer Part Number
2N5306-D74Z
Description
2n5306 Npn Darlington Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N5306-D74Z.pdf
(4 pages)
©2002 Fairchild Semiconductor Corporation
NPN Darlington Transistor
• This device is designed for applications requiring extremely high
• Sourced from process 05.
• See MPSA14 for characteristics.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics *
h
V
V
V
Small Signal Characteristics
C
h
C
CBO
EBO
Symbol
current gain at currents to 1.0A.
FE
fe
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
BE
cb
, T
Symbol
(sat)
(sat)
(on)
STG
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturatin Voltage
Base-Emitter On Voltage
Collector-Base Capacitance
Small-Signal Current Gain
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
T
Parameter
A
=25 C unless otherwise noted
T
A
=25 C unless otherwise noted
- Continuous
2N5306
I
I
I
V
V
V
V
V
I
I
I
V
I
f = 1.0KHz
I
f = 10MHz
C
C
E
C
C
C
C
C
CB
CB
EB
CE
CE
CB
= 0.1 A, I
= 10mA, I
= 0.1 A, I
= 200mA, I
= 200mA, I
= 200mA, V
= 2.0mA, V
= 2.0mA, V
= 25V, I
= 25V, I
= 12V, I
= 5.0V, I
= 5.0V, I
= 10V, f = 1.0MHz
Test Condition
C
C
B
E
E
E
C
C
B
B
CE
CE
= 0
= 0
= 0
= 0
= 0, T
= 0
CE
= 2.0mA
= 100mA
= 0.2mA
= 0.2mA
= 5.0V,
= 5.0V,
= 5.0V
a
= 100 C
-55 ~ +150
1. Emitter 2. Collector 3. Base
Value
20,000
1
7,000
1.2
7000
25
25
12
Min.
6.0
25
25
12
Typ.
TO-92
70,000
Max.
0.1
0.1
1.4
1.6
1.5
20
10
Units
Rev. B1, July 2002
V
V
V
A
C
Units
pF
V
V
V
V
V
V
A
A
A
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2N5306-D74Z Summary of contents
Page 1
... Base-Emitter Saturatin Voltage BE V (on) Base-Emitter On Voltage BE Small Signal Characteristics C Collector-Base Capacitance cb h Small-Signal Current Gain fe * Pulse Test: Pulse Width 300 s, Duty Cycle ©2002 Fairchild Semiconductor Corporation 2N5306 T =25 C unless otherwise noted A Parameter - Continuous T =25 C unless otherwise noted A Test Condition I = 10mA ...
Page 2
... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted A Parameter Max. Units 625 mW 5.0 mW/ C 83.3 C/W 200 C/W Rev. B1, July 2002 ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B1, July 2002 ...
Page 4
CROSSVOLT â â â â Rev. I ...