2N5366-D75Z Fairchild Semiconductor, 2N5366-D75Z Datasheet
2N5366-D75Z
Manufacturer Part Number
2N5366-D75Z
Description
2n5366 Pnp General Purpose Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N5366-D75Z.pdf
(4 pages)
©2002 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
• This device is designed for general purpose amplifiers applications at
• Sourced from process 68.
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
V
V
V
I
T
V
V
V
I
I
I
h
V
V
V
C
C
h
P
R
C
CBO
CES
EBO
Symbol
collector currents to 300mA.
FE
fe
J
CEO
CBO
EBO
CBO
CEO
EBO
CE
BE
BE
D
ob
ib
Symbol
, T
JA
Symbol
(sat)
(sat)
(on)
STG
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Operating and Storage Junction Temperature Range
Parameter
T
A
T
=25 C unless otherwise noted
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
Parameter
- Continuous
2N5366
I
I
I
V
V
V
V
V
V
I
I
I
I
V
V
V
V
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
CB
CE
= 10 A
= 10mA
= 10 A
= 50mA, I
= 300mA, I
= 50mA, I
= 300mA, I
= 40V
= 40V
= 4.0V
= 10V, I
= 1.0V, I
= 5.0V, I
= 10V, I
= 10V, f = 1MHz
= 0.5V, f = 1MHz
= 10V, I
Test Condition
C
B
B
C
C
C
C
B
B
= 2.5mA
= 2.5mA
= 2.0mA
= 2.0mA
= 2.0mA, f = 1MHz
= 50mA
= 300mA
= 30mA
= 30mA
1. Emitter 2. Collector 3. Base
1
-55 ~ +150
Value
Min.
100
500
4.0
0.5
4.0
40
40
80
40
80
40
40
Max.
625
200
5.0
Typ.
450
TO-92
Max.
0.25
100
100
300
1.0
1.1
2.0
0.8
8.0
10
35
mW/ C
Units
Units
Rev. A1, July 2002
mA
mW
C/W
V
V
V
C
Units
nA
nA
pF
pF
V
V
V
V
V
A
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2N5366-D75Z Summary of contents
Page 1
... C Input Capacitance ib h Small-Signal Current Gain fe Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation 2N5366 T =25 C unless otherwise noted C Parameter - Continuous T =25 C unless otherwise noted C Test Condition 10mA ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, July 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...
Page 4
CROSSVOLT â â â â Rev. I ...