2N5400-NL Fairchild Semiconductor, 2N5400-NL Datasheet

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2N5400-NL

Manufacturer Part Number
2N5400-NL
Description
2n5400 Pnp General Purpose Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet
2001 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
CEO
CBO
EBO
J
This device is designed for use as general purpose amplifiers
and switches requiring high voltages.
Absolute Maximum Ratings*
*
JC
JA
PNP General Purpose Amplifier
, T
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
Derate above 25 C
B
E
2N5400
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
2N5400
Max
83.3
625
200
5.0
-55 to +150
Value
120
130
600
5.0
Units
Units
mW/ C
mA
mW
C/W
C/W
V
V
V
C
2N5400, Rev A

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2N5400-NL Summary of contents

Page 1

... Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient JA 2001 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 120 V 130 V 5.0 V 600 mA -55 to +150 C Max Units 2N5400 625 mW 5.0 mW/ C 83.3 C/W 200 C/W 2N5400, Rev A ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 200 150 125 °C 100 25 ° °C 0 0.0001 0.001 0. COLLECTOR CURRENT (A) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Input and Output Capacitance vs Reverse Voltage 0 REVERSE BIAS VOLTAGE(V) R PNP General Purpose Amplifier (continued) Power Dissipation vs Ambient Temperature 700 f = 1.0 MHz ...

Page 5

... PROELECTRON SERIES), 96 L34Z TO-92 STANDARD NO LEADCLIP STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 FSCINT Label ©2001 Fairchild Semiconductor Corporation TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles 5 Reels per Intermediate Box F63TNR Label Customized Label AMMO PACK OPTION See Fig 3 ...

Page 6

TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Style “A”, D26Z, D70Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE ...

Page 7

TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4 User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ELECT ROSTATIC SEN SITIVE D EVICES F63TNR Label ...

Page 8

... TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) ©2000 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 January 2000, Rev. B ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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