MRF10005 Tyco, MRF10005 Datasheet

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MRF10005

Manufacturer Part Number
MRF10005
Description
The RF Line Microwave Power Transistor
Manufacturer
Tyco
Datasheet
1.MRF10005.pdf (4 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MRF10005
Manufacturer:
FREESCALE
Quantity:
2 300
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed for CW and long pulsed common base amplifier applications,
such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high
overall duty cycles.
NOTES:
REV 6
1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous (1)
Total Device Dissipation @ T
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction to Case (2)
Guaranteed Performance @ 1.215 GHz, 28 Vdc
RF Performance Curves given for 28 Vdc and 36 Vdc Operation
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Hermetically Sealed Industry Standard Package
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Derate above 25 C
Output Power = 5.0 Watts CW
Minimum Gain = 8.5 dB, 10.3 dB (Typ)
A
= 25 C (1)
Characteristic
Rating
Symbol
Symbol
V
V
V
R
T
P
CBO
CES
EBO
T
I
stg
C
D
J
JC
CASE 336E–02, STYLE 1
MICROWAVE POWER
5.0 W, 960–1215 MHz
–65 to +200
TRANSISTOR
NPN SILICON
Value
1.25
Max
143
200
3.5
7.0
55
55
25
Order this document
by MRF10005/D
mW/ C
mAdc
Unit
Watt
Unit
Vdc
Vdc
Vdc
C/W
C
C

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MRF10005 Summary of contents

Page 1

... These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 1 Order this document by MRF10005/D 5.0 W, 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 336E– ...

Page 2

ELECTRICAL CHARACTERISTICS (T C Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage ( mAdc Collector–Base Breakdown Voltage ( mAdc Emitter–Base Breakdown Voltage (I = 0.5 mAdc Collector Cutoff Current ( ...

Page 3

Figure 2. Output Power versus Input Power Figure 4. Series Equivalent Input/Output Impedances REV 6 3 Figure 3. Output Power versus Input Power ...

Page 4

Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for ...

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