MRF1002 Motorola, MRF1002 Datasheet

no-image

MRF1002

Manufacturer Part Number
MRF1002
Description
MICROWAVE POWER TRANSISTOR
Manufacturer
Motorola
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF1002MA
Manufacturer:
ASI
Quantity:
20 000
Part Number:
MRF1002MB
Manufacturer:
ASI
Quantity:
20 000
Part Number:
MRF1002MC
Manufacturer:
ASI
Quantity:
20 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistors
. . . designed for Class B and C common base amplifier applications in short
and long pulse TACAN, IFF, DME, and radar transmitters.
REV 6
NOTES:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T C = 25 C (1)
Storage Temperature Range
Thermal Resistance, Junction to Case (2)
Collector–Emitter Breakdown Voltage
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Motorola, Inc. 1994
Guaranteed Performance @ 1090 MHz, 35 Vdc
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Derate above 25 C
(I C = 5.0 mAdc, I B = 0)
(I C = 5.0 mAdc, V BE = 0)
(I C = 5.0 mAdc, I E = 0)
(I E = 1.0 mAdc, I C = 0)
(V CB = 35 Vdc, I E = 0)
(I C = 100 mAdc, V CE = 5.0 Vdc)
Output Power = 2.0 Watts Peak
Minimum Gain = 10 dB
Characteristic
Rating
Characteristic
(T C = 25 C unless otherwise noted.)
Symbol
Symbol
V CEO
V CBO
V EBO
R JC
T stg
P D
I C
– 65 to +150
Value
Max
250
3.5
7.0
20
50
40
25
V (BR)CEO
V (BR)CBO
V (BR)CES
V (BR)EBO
Symbol
I CBO
h FE
mW/ C
mAdc
Watts
Unit
Unit
Vdc
Vdc
Vdc
C/W
C
Min
3.5
20
50
50
10
MRF1002MB
MRF1002MA
2.0 W (PEAK), 960 – 1215 MHz
CASE 332A–03, STYLE 1
Typ
CASE 332–04, STYLE 1
MICROWAVE POWER
MRF1002MA MRF1002MB
TRANSISTORS
NPN SILICON
MRF1002MA
MRF1002MB
Max
100
0.5
Order this document
by MRF1002MA/D
(continued)
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
1

Related parts for MRF1002

MRF1002 Summary of contents

Page 1

... Min V (BR)CEO 20 V (BR)CES 50 V (BR)CBO 50 V (BR)EBO 3.5 I CBO — Order this document by MRF1002MA/D MRF1002MA MRF1002MB 2.0 W (PEAK), 960 – 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332–04, STYLE 1 MRF1002MA CASE 332A–03, STYLE 1 MRF1002MB Typ Max Unit — ...

Page 2

... C1, C3 — 220 pF Chip Capacitor, 100 mil ATC C2 — 20 F/50 Vdc Electrolytic C4 — 0.1 F Erie Redcap L1, L2 — 2 Turns #18 AWG, 1/8 ID Z1–Z14 — Distributed Microstrip Elements, See Photomaster Board Material — 0.031 Thick Teflon–Fiberglass, Board Material — MRF1002MA MRF1002MB unless otherwise noted.) Symbol Min C ob — ...

Page 3

... FREQUENCY (MHz) P out = 1090 1215 f, FREQUENCY (MHz Vdc 1. Ohms Ohms Ohms P out = 2 0 15.5 + j16 j32 j21 15 + j20 25 + j34 31 + j26 14 + j27 33.5 + j42 j32.5 MRF1002MA MRF1002MB 3 ...

Page 4

... P out = 10 1090 MHz Figure 7. Typical Long Pulse Performance MRF1002MA MRF1002MB 4 MOTOROLA RF DEVICE DATA ...

Page 5

... NOM 45 NOM 4.97 6.22 0.180 0.245 2.92 3.68 0.115 0.145 INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.270 0.290 6.86 7.36 C 0.115 0.135 2.93 3.42 D 0.195 0.205 4.96 5.20 F 0.095 0.105 2.42 2.66 H 0.050 0.070 1.27 1.77 J 0.003 0.007 0.08 0.17 K 0.600 ––– 15.24 ––– MRF1002MA MRF1002MB 5 ...

Page 6

... EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF1002MA MRF1002MB 6 *MRF1002MA/D* ...

Related keywords