MRF10070 Motorola, MRF10070 Datasheet

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MRF10070

Manufacturer Part Number
MRF10070
Description
MICROWAVE POWER TRANSISTOR
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistor
such as TCAS, TACAN and Mode–S transmitters.
NOTES:
REV 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ T C = 25 C (1), (2)
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction to Case (3)
Designed for 1025 –1150 MHz pulse common base amplifier applications
Motorola, Inc. 1994
Guaranteed Performance @ 1090 MHz
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Characterized with 10 s, 10% Duty Cycle Pulses
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input and Output Matching
Hermetically Sealed Package
Recommended Driver for MRF10500 Transistor or a Pair of MRF10350
Transistors
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case JC value
Derate above 25 C
amplifiers.
measured @ 10 s, 10%.)
Output Power = 70 Watts Peak
Gain = 9.0 dB Min
Characteristic
Rating
Symbol
Symbol
V CES
V CBO
V EBO
R JC
T stg
P D
T J
I C
MRF10070
CASE 376C–01, STYLE 1
MICROWAVE POWER
– 65 to + 200
1025 – 1150 MHz
TRANSISTOR
NPN SILICON
Value
70 W (PEAK)
Max
438
200
3.5
8.8
2.5
0.4
65
65
Order this document
by MRF10070/D
MRF10070
Watts
W/ C
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
C
C
1

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MRF10070 Summary of contents

Page 1

... Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case JC value measured @ 10 s, 10%.) REV 6 MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 Order this document by MRF10070/D MRF10070 70 W (PEAK) 1025 – 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 376C–01, STYLE 1 ...

Page 2

... — 100 mil Chip Capacitor C2 — 100 mil Chip Capacitor C3 — 0 — 100 F/100 Vdc Electrolytic L1 — 3 turns #18 AWG, 1/8 ID, 0.18 Long 79 1100 459 79 79 352 MRF10070 2 Symbol Min V (BR)CES 65 V (BR)CBO 65 V (BR)EBO 3.5 I CBO — ...

Page 3

... 1150 MHz 1125 f = 1150 MHz OUT ) OHMS 14 the conjugate of the optimum load 13.3 – j1.0 impedance into which the device operates at a 11.3 – j2.1 given output power voltage and frequency. 10.4 – j2.5 10.2 – j2 1025 1050 1090 MRF10070 3 ...

Page 4

... MILLIMETERS DIM MIN MAX MIN MAX A 0.890 0.910 22.61 23.11 B 0.370 0.400 9.40 10.16 C 0.190 0.210 4.83 5.33 D 0.140 0.160 3.56 4.06 E 0.055 0.065 1.40 1.65 F 0.003 0.006 0.08 0.15 G 0.650 BSC 16.51 BSC H 0.110 0.130 2.80 3.30 K 0.180 0.220 4.57 5.59 N 0.390 0.410 9.91 10.41 Q 0.115 0.135 2.93 3.42 R 0.390 0.140 9.91 10.41 STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE *MRF10070/D* MRF10070/D MOTOROLA RF DEVICE DATA ...

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