MRF10120 Motorola, MRF10120 Datasheet

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MRF10120

Manufacturer Part Number
MRF10120
Description
MICROWAVE POWER TRANSISTORS
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Long Pulse
Power Transistor
such as JTIDS and Mode S transmitters.
REV 7
NOTES:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ T C = 25 C (1), (2)
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction to Case (3)
Collector–Emitter Breakdown Voltage (I C = 60 mAdc, V BE = 0)
Collector–Base Breakdown Voltage (I C = 60 mAdc, I E = 0)
Emitter–Base Breakdown Voltage (I E = 10 mAdc, I C = 0)
Collector Cutoff Current (V CB = 36 Vdc, I E = 0)
Designed for 960 – 1215 MHz long pulse common base amplifier applications
Motorola, Inc. 1995
Guaranteed Performance @ 1.215 GHz, 36 Vdc
100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR
Hermetically Sealed Industry Standard Package
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input and Output Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Derate above 25 C
Output Power = 120 Watts Peak
Gain = 8.0 dB Min., 9.2 dB (Typ)
Characteristic
Characteristic
Rating
(T C = 25 C unless otherwise noted.)
V (BR)CBO
V (BR)CES
V (BR)EBO
Symbol
I CBO
Symbol
Symbol
V CES
V CBO
V EBO
R JC
T stg
Min
P D
3.5
T J
55
55
I C
120 W (PEAK), 960 – 1215 MHz
MRF10120
CASE 355C–02, STYLE 1
Typ
MICROWAVE POWER
– 65 to + 200
TRANSISTOR
NPN SILICON
Value
2.17
Max
0.46
380
200
3.5
55
55
15
Max
Order this document
25
by MRF10120/D
MRF10120
(continued)
mAdc
Watts
W/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
Adc
Vdc
Vdc
Vdc
C/W
C
1

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MRF10120 Summary of contents

Page 1

... T J 200 Symbol Max R JC 0.46 Symbol Min Typ V (BR)CES 55 — V (BR)CBO 55 — V (BR)EBO 3.5 — I CBO — — Order this document by MRF10120/D Unit Vdc Vdc Vdc Adc Watts Unit C/W Max Unit — Vdc — Vdc — Vdc 25 mAdc (continued) MRF10120 ...

Page 2

... Z1 Z2 INPUT C1 — 270 pF 100 Mil Chip Capacitor C2 — 220 pF 100 Mil Chip Capacitor C3 — 0 — Electrolytic L1 — 3 Turns #18 AWG, 1/8 ID, 0.18 Long 0.2 0.15 1.1 0.081 0.6 0.3 0.13 0.91 0.6 MRF10120 unless otherwise noted.) Symbol Min 8 D.U. – Z9 — Microstrip, See Details Board Material — ...

Page 3

... Figure 5. Series Equivalent Output Impedance f = 1215 MHz INPUT POWER (WATTS pk) 1215 1150 f = 960 MHz 1090 1025 out = 120 W f (MHz (OHMS) 960 5.33 + j1.37 1025 4.59 – j0.307 1090 3.74 – j0.612 1150 2.43 – j0.492 1215 1.80 – j0.385 MRF10120 3 ...

Page 4

... MAX MIN MAX A 0.890 0.910 22.61 23.11 B 0.375 0.395 9.53 10.03 C 0.150 0.165 3.81 4.19 D 0.145 0.155 3.69 3.93 E 0.055 0.065 1.40 1.65 H 0.120 0.130 3.05 3.30 J 0.003 0.006 0.08 0.15 K 0.185 0.215 4.70 5. REF 45 REF N 0.490 0.510 12.45 12.95 Q 0.115 0.125 2.93 3.17 R 0.395 0.405 10.04 10.28 U 0.700 BSC 17.78 BSC STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE MRF10120/D MOTOROLA RF DEVICE DATA ...

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