MRF10150 Motorola, MRF10150 Datasheet

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MRF10150

Manufacturer Part Number
MRF10150
Description
MICROWAVE POWER TRANSISTORS
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistor
. . . designed for 1025 – 1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
NOTES:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ T C = 25 C (1), (2)
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction to Case (3)
Motorola, Inc. 1994
Guaranteed Performance @ 1090 MHz
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Hermetically Sealed Package
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input and Output Matching
Characterized with 10 s, 10% Duty Cycle Pulses
Recommended Driver for a Pair of MRF10500 Transistors
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case JC value
Derate above 25 C
amplifiers.
measured @ 10 s, 10%.)
Output Power = 150 Watts Peak
Gain = 9.5 dB Min, 10.0 dB (Typ)
Characteristic
Rating
Symbol
Symbol
V CES
V CBO
V EBO
R JC
T stg
P D
T J
I C
MRF10150
CASE 376B–02, STYLE 1
MICROWAVE POWER
– 65 to + 200
1025 – 1150 MHz
150 W (PEAK)
TRANSISTOR
NPN SILICON
Value
Max
0.25
700
200
3.5
4.0
65
65
14
Order this document
by MRF10150/D
MRF10150
Watts
W/ C
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
C
C
1

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MRF10150 Summary of contents

Page 1

... These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case JC value measured @ 10 s, 10%.) MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 Order this document by MRF10150/D MRF10150 150 W (PEAK) 1025 – 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 376B– ...

Page 2

... Z1 Z2 INPUT C1 — 100 Mil Chip Capacitor C2 — 100 Mil Chip Capacitor C3 — 0 — 100 F, 100 Vdc, Electrolytic L1 — 3 Turns #18 AWG, 1/8 ID, 0.18 Long .15 .081 1.383 .081 .489 0.943 .334 1.0 MRF10150 2 Symbol Min V (BR)CES V (BR)CBO V (BR)EBO 3.5 I CBO 9 D.U.T. ...

Page 3

... Z in 1090 1120 1150 Z OUT ( 1030 MHz 1060 1150 1120 1090 Z OL* (Z OUT ) OHMS 4 the conjugate of the optimum load 4.6 + j0.3 impedance into which the device operates at a 4.1 – j1.0 given output power voltage and frequency. 3.8 – j0.8 3.6 – j0 MRF10150 3 ...

Page 4

... MILLIMETERS DIM MIN MAX MIN MAX A 0.890 0.910 22.61 23.11 B 0.370 0.400 9.40 10.16 C 0.145 0.160 3.69 4.06 D 0.140 0.160 3.56 4.06 E 0.055 0.065 1.40 1.65 F 0.003 0.006 0.08 0.15 G 0.650 BSC 16.51 BSC H 0.110 0.130 2.80 3.30 K 0.180 0.220 4.57 5.59 N 0.390 0.410 9.91 10.41 Q 0.115 0.135 2.93 3.42 R 0.390 0.140 9.91 10.41 STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE *MRF10150/D* MRF10150/D MOTOROLA RF DEVICE DATA ...

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