MRF10350 Tyco, MRF10350 Datasheet

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MRF10350

Manufacturer Part Number
MRF10350
Description
MICROWAVE POWER TRANSISTOR NPN SILICON
Manufacturer
Tyco
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF10350
Manufacturer:
M/A-COM
Quantity:
5 000
Part Number:
MRF10350
Manufacturer:
MA/COM
Quantity:
20 000
SEMICONDUCTOR TECHNICAL DATA
The RF Line
such as TCAS, TACAN and Mode–S transmitters.
NOTES:
REV 1
1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ T
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction to Case (3)
Designed for 1025–1150 MHz pulse common base amplifier applications
Guaranteed Performance @ 1090 MHz
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Hermetically Sealed Package
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input and Output Matching
Characterized using Mode–S Pulse Format
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst Case
Derate above 25 C
amplifiers.
using Mode–S pulse train, 128 s burst 0.5 s on, 0.5 s off repeating at 6.4 ms interval.)
Output Power = 350 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
C
= 25 C (1), (2)
Characteristic
Rating
Symbol
Symbol
V
V
V
R
T
P
CBO
CES
EBO
T
I
stg
C
D
J
JC
CASE 355E–01, STYLE 1
MICROWAVE POWER
–65 to +200
1025–1150 MHz
350 W (PEAK)
TRANSISTOR
NPN SILICON
Value
1590
Max
0.11
200
3.5
9.1
65
65
31
Order this document
by MRF10350/D
JC
Watts
W/ C
measured
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
C
C

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MRF10350 Summary of contents

Page 1

... Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst Case using Mode–S pulse train, 128 s burst 0.5 s on, 0.5 s off repeating at 6.4 ms interval.) REV 1 1 Order this document by MRF10350/D 350 W (PEAK) 1025–1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 355E– ...

Page 2

ELECTRICAL CHARACTERISTICS (T C Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage ( mAdc Collector–Base Breakdown Voltage ( mAdc Emitter–Base Breakdown Voltage ( mAdc Collector Cutoff Current ( ...

Page 3

Figure 2. Output Power versus Input Power Figure 3. Series Equivalent Input/Output Impedances REV 1 3 (1) 128 s burst 0.5 s on, 0.5 s off (1) repeating at 6.4 ms interval. ...

Page 4

–T– Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 ...

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