MRF1047T1 Motorola, MRF1047T1 Datasheet - Page 2

• Manufacturer Part Number: MRF1047T1
• Description: NPN Silicon Low Noise Transistor
• Manufacturer: Motorola

OFF CHARACTERISTICS [Note 1]
ON CHARACTERISTICS [Note 1]
DYNAMIC CHARACTERISTICS
PERFORMANCE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
NOTES: 1. Pulse width 300 s, duty cycle 2% pulsed.
2
Collector–Emitter Breakdown Voltage (I
Collector–Base Breakdown Voltage (I
Emitter–Base Breakdown Voltage (I
Collector Cutoff Current (V
Emitter Cutoff Current (V
DC Current Gain (V
Collector–Base Capacitance (V
Current–Gain Bandwidth Product (V
Insertion Gain
Maximum Stable Gain and/or Maximum Available Gain [Note 2]
Minimum Noise Figure
Associated Gain at Minimum NF
Output Power at 1.0 dB Gain Compression [Note 3] (V
Output Third Order Intercept [Note 3] (V
V
V
V
V
V
V
V
V
I
f = 1.0 GHz)
C
CE
CE
CE
CE
CE
CE
CE
CE
= 3.0 mA, f = 1.0 GHz)
= 1.0 V, I
= 3.0 V, I
= 1.0 V, I
= 3.0 V, I
= 1.0 V, I
= 3.0 V, I
= 1.0 V, I
= 3.0 V, I
2. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
3. Z
in
= 50
C
C
C
C
C
C
C
C
= 1.0 mA, f = 1.0 GHz
= 3.0 mA, f = 1.0 GHz
= 1.0 mA, f = 1.0 GHz
= 3.0 mA, f = 1.0 GHz
= 1.0 mA, f = 1.0 GHz
= 3.0 mA, f = 1.0 GHz
= 1.0 mA, f = 1.0 GHz
= 3.0 mA, f = 1.0 GHz
and Z
CE
MAG
= 3.0 V, I
out
EB
matched for optimum IP3.
CB
= 1.0 V, I
|
=1.0 V, I
S 21
S 12
Characteristic
CB
C
= 3.0 mA)
= 1.0 Vdc, I
E
K
CE
C
C
= 0.1 mA, I
E
= 0)
= 3.0 Vdc, I
C
= 0.1 mA, I
= 0)
CE
= 0.1 mA, I
K 2
(T
= 3.0 V, I
C
= 25 C, unless otherwise noted)
E
1
= 0, f = 1.0 MHz)
C
|,
E
= 0)
C
C
if K
= 0)
B
= 15 mA, f = 1.0 GHz)
= 3.0 mA,
= 0)
CE
= 3.0 V,
1, MSG
MRF1047T1
|
S 21
S 12
|
, if K
MSG, MAG
V(
V
V
Symbol
(BR)CBO
(BR)CBO
NF
|S
BR)CEO
OIP
I
I
P
G
h
C
CBO
EBO
1
1dB
f
21
FE
NF
cb
min
|
3
2
MOTOROLA RF PRODUCTS DEVICE DATA
Min
100
5.0
2.5
12
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
0.4
8.0
1.2
1.0
0.5
12
13
11
16
10
13
22
–
–
–
–
–
–
Max
300
0.2
0.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
dBm
dBm
Unit
GHz
Vdc
Vdc
Vdc
dB
dB
dB
dB
pF
–
A
A