MRF10500 Motorola, MRF10500 Datasheet

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MRF10500

Manufacturer Part Number
MRF10500
Description
MICROWAVE POWER TRANSISTORS
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistors
. . . designed for 1025 – 1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
NOTES:
REV 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ T C = 25 C (1), (2)
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction to Case (3)
Motorola, Inc. 1994
Guaranteed Performance @ 1090 MHz
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Hermetically Sealed Industry Package
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input and Output Matching
Characterized with 10 s, 1% Duty Cycle Pulses
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case JC value
Derate above 25 C
amplifiers.
measured @ 32 s, 2%.)
Output Power = 500 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
Characteristic
Rating
Symbol
Symbol
V CES
V CBO
V EBO
R JC
T stg
P D
T J
I C
MRF10500
MRF10501
CASE 355D–02, STYLE 1
CASE 355H–01, STYLE 1
MICROWAVE POWER
– 65 to + 200
1025 – 1150 MHz
TRANSISTORS
500 W (PEAK)
NPN SILICON
Value
1460
Max
0.12
200
3.5
8.3
MRF10500
MRF10501
65
65
29
MRF10500 MRF10501
Order this document
by MRF10500/D
Watts
W/ C
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
C
C
2–1

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MRF10500 Summary of contents

Page 1

... These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case JC value measured @ 32 s, 2%.) REV 6 MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 Order this document by MRF10500/D MRF10500 MRF10501 500 W (PEAK) 1025 – 1150 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 355D– ...

Page 2

... RF INPUT — 100 Mil Chip Capacitor C2 — 100 Mil Chip Capacitor C3 — 0 — 100 F, 100 Vdc, Electrolytic L1 — 3 Turns #18 AWG, 1/8 ID, 0.18 Long .081 1.309 1.108 0.140 MRF10500 MRF10501 2–2 Symbol Min V (BR)CES 65 V (BR)CBO 65 V (BR)EBO 3.5 I CBO — ...

Page 3

... INPUT POWER (WATTS) 1090 1120 1060 1150 f = 1030 MHz f = 1030 MHz 1060 Z in 1150 1090 1120 OUT ) OHMS 62.6 + j1. the conjugate of the optimum load j0.25 2.56 + j2.09 impedance into which the device operates at a given output power voltage and frequency. j1.45 2.12 + j2.29 21.9 + j2.15 j1.35 91.6 + j1.62 115 MRF10500 MRF10501 2–3 ...

Page 4

... EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF10500 MRF10501 2–4 PACKAGE DIMENSIONS ...

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