MRF10502 Tyco, MRF10502 Datasheet

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MRF10502

Manufacturer Part Number
MRF10502
Description
MICROWAVE POWER TRANSISTOR NPN SILICON
Manufacturer
Tyco
Datasheet

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SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistor
such as TCAS, T ACAN and Mode–S transmitters.
NOTES:
Replaces MRF10500/D
1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak
Total Device Dissipation @ T C = 25 C (1), (2)
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction to Case (3)
Designed for 1025– 1150 MHz pulse common base amplifier applications
Guaranteed Performance @ 1090 MHz
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Hermetically Sealed Industry Package
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input and Output Matching
Characterized with 10 s, 1% Duty Cycle Pulses
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case
Derate above 25 C
amplifiers.
measured @ 32 s, 2%.)
Output Power = 500 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
(1)
Characteristic
Rating
Symbol
Symbol
V CES
V CBO
V EBO
R JC
T stg
P D
T J
I C
MRF10502
MICROWAVE POWER
CASE 355J–02, STYLE 1
– 65 to +200
1025 – 1150 MHz
500 W (PEAK)
TRANSISTOR
NPN SILICON
Value
1460
Max
0.12
200
3.5
8.3
65
65
29
Order this document
by MRF10502/D
Watts
W/ C
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
C
C
JC value

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MRF10502 Summary of contents

Page 1

... These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case measured @ 32 s, 2%.) Replaces MRF10500/D 1 Order this document by MRF10502/D MRF10502 500 W (PEAK) 1025 – 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 355J– ...

Page 2

ELECTRICAL CHARACTERISTICS ( unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage ( mAdc Collector–Base Breakdown Voltage ( mAdc Emitter–Base Breakdown Voltage ...

Page 3

Figure 2. Output Power versus Input Power P OUT = 500 MHz OHMS 1030 55.3 + j2.25 1060 56.2 + 1090 55.2 – 1120 53.7 – j1.35 ...

Page 4

–T– SEA TING PLANE Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 ...

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