MRF1150MB Motorola, MRF1150MB Datasheet

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MRF1150MB

Manufacturer Part Number
MRF1150MB
Description
(MRF1150MA/B) MICROWAVE POWER TRANSISTORS
Manufacturer
Motorola
Datasheet

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DataSheet4U.com
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DataSheet
4
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistors
pulse TACAN, IFF, and DME transmitters.
REV 8
U
NOTES:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ T C = 25 C (1) (2)
Storage Temperature Range
Thermal Resistance, Junction to Case (3)
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain (4)
.com
Designed for Class B and C common base amplifier applications in short
Motorola, Inc. 1997
Guaranteed Performance @ 1090 MHz, 50 Vdc
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
1. Pulse Width = 10 s, Duty Cycle = 1%.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80 s Pulse on Tektronix 576 or equivalent.
Derate above 25 C
(I C = 50 mAdc, V BE = 0)
(I C = 50 mAdc, I E = 0)
(I E = 5.0 mAdc, I C = 0)
(V CB = 50 Vdc, I E = 0)
(I C = 5.0 Adc, V CE = 5.0 Vdc)
Output Power = 150 Watts Peak
Minimum Gain = 7.8 dB
Rating
Characteristic
Characteristic
(T C = 25 C unless otherwise noted)
Symbol
V CBO
V EBO
T stg
P D
I C
DataSheet4U.com
– 65 to +150
Value
3.33
583
4.0
70
12
V (BR)CBO
V (BR)CES
V (BR)EBO
Symbol
I CBO
h FE
Watts
W/ C
Unit
Vdc
Vdc
Adc
C
Symbol
R JC
Min
4.0
70
70
10
MRF1150MA
MRF1150MB
150 W PEAK, 960 – 1215 MHz
CASE 332A–03, STYLE 1
Typ
30
CASE 332–04, STYLE 1
MICROWAVE POWER
TRANSISTORS
MRF1150MA MRF1150MB
(MRF1150MA)
(MRF1150MB)
NPN SILICON
Max
0.3
Max
Order this document
10
by MRF1150MA/D
(continued)
mAdc
Unit
Unit
Vdc
Vdc
Vdc
C/W
1

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MRF1150MB Summary of contents

Page 1

... MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332–04, STYLE 1 (MRF1150MA) CASE 332A–03, STYLE 1 (MRF1150MB) C Symbol Max R JC 0.3 Min Typ Max 70 — — 70 — — 4.0 — — — — — MRF1150MA MRF1150MB Unit C/W Unit Vdc Vdc Vdc mAdc — (continued) 1 ...

Page 2

... VSWR = 10:1 All Phase Angles) RF INPUT Z2 Z1 200 f = 960 MHz 150 1090 MHz 100 INPUT POWER (WATTS pk) DataSheet4U.com Figure 2. Output Power versus Input Power MRF1150MA MRF1150MB 2 4 DataSheet U .com ( unless otherwise noted) Symbol DUT DataSheet4U.com C1, C2 — ...

Page 3

... MHz Ohms Ohms 960 1.5 + j9.6 2.6 + j4.1 1090 5.0 + j7.5 2.7 + j4.6 1215 2.4 + j5.6 2 Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage, and frequency. SCALE 2 s/DIV MRF1150MA MRF1150MB 150 1215 3 ...

Page 4

... 8–32 UNC SEATING PLANE DataSheet4U.com MRF1150MA MRF1150MB 4 4 DataSheet U .com PACKAGE DIMENSIONS –T– SEATING PLANE E –B– 0.76 (0.030 CASE 332–04 ISSUE D (MRF1150MA) DataSheet4U.com CASE 332A–03 ...

Page 5

... Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 Mfax is a trademark of Motorola, Inc. MRF1150MA MRF1150MB MRF1150MA/D 5 ...

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