MRF15030

Manufacturer Part NumberMRF15030
DescriptionRF POWER TRANSISTOR
ManufacturerMotorola
MRF15030 datasheet
 


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( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400 – 1600 MHz.
Specified 26 Volts, 1490 MHz, Class AB Characteristics:
Output Power — 30 Watts
Gain — 9 dB Min @ 30 Watts (PEP)
Efficiency — 30% Min @ 30 Watts (PEP)
Intermodulation Distortion — – 30 dBc Max @ 30 Watts (PEP)
Third Order Intercept Point — 53.5 dBm Typ @ 1490 MHz,
V CE = 24 Vdc, I C = 2.5 Adc
Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
Characterized with Small Signal S–Parameters from 1000 – 2000 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at all Phase Angles with
3:1 Load VSWR @ 28 Vdc, at Rated Output Power
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ T C = 25 C
Derate above 25 C
Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 50 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
(I C = 50 mAdc, V BE = 0)
Collector–Emitter Breakdown Voltage
(I C = 50 mAdc, R BE = 100 )
REV 7
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
www.DataSheet4U.com
Rating
Characteristic
(T C = 25 C unless otherwise noted.)
Symbol
V (BR)CEO
V (BR)CES
V (BR)CER
Order this document
by MRF15030/D
MRF15030
30 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 1
Symbol
Value
Unit
V CEO
25
Vdc
V CES
60
Vdc
V EBO
4
Vdc
I C
10
Adc
P D
125
Watts
0.71
W/ C
T stg
– 65 to +150
C
Symbol
Max
Unit
R JC
1.40
C/W
Min
Typ
Max
Unit
25
29
Vdc
60
64
Vdc
30
52
Vdc
(continued)
www.DataSheet4U.com
MRF15030
1

MRF15030 Summary of contents

  • Page 1

    ... mAdc 100 ) REV 7 MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 www.DataSheet4U.com Rating Characteristic ( unless otherwise noted.) Symbol V (BR)CEO V (BR)CES V (BR)CER Order this document by MRF15030/D MRF15030 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON CASE 395C–01, STYLE 1 Symbol Value Unit V CEO 25 Vdc V CES ...

  • Page 2

    ... Vdc 125 1490 MHz Single Tone INPUT POWER (WATTS) Figure 1. Output Power & Power Gain versus Input Power MRF15030 unless otherwise noted.) Symbol Min V (BR)EBO 4 I CES — — ...

  • Page 3

    ... Figure 8. Class A Third Order Intercept Point 1.75 20 1.50 10 1.25 VSWR 0 1.00 1480 1490 1500 1510 1520 1530 f, FREQUENCY (MHz Vdc 1490 MHz 1490.1 MHz 1.0 10 100 Vdc 2 1490 MHz 1490.1 MHz INPUT POWER (dBm) MRF15030 3 ...

  • Page 4

    ... Conjugate of optimum load impedance into Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ P out = 30 Watts (PEP Volts 125 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz MRF15030 4 TYPICAL CHARACTERISTICS flange = ...

  • Page 5

    ... C11 C13 C14 L2 C10 RF Output N2 C12 C9 C8 MRF15030 5 ...

  • Page 6

    ... Variable Capacitor, Johanson C8, C10 51 pF, Chip Capacitor, Murata Erie C13 470 F, Electrolytic Capacitor, Mallory L1 Turn, 20 AWG, 0.126 ID Choke N1, N2 Type N Flange Mount RF Connector, Omni Spectra Figure 13. Class A Test Fixture Electrical Schematic MRF15030 DUT C7 Q1 Transistor NPN Motorola (BD135) Q2 ...

  • Page 7

    ... DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.739 0.750 18.77 19.05 B 0.240 0.260 6.10 6.60 C 0.165 0.198 4.19 5.03 D 0.215 0.225 5.46 5.72 E 0.055 0.070 1.40 1.78 H 0.079 0.091 2.01 2.31 J 0.004 0.006 0.10 0.15 K 0.210 0.240 5.33 6.10 N 0.315 0.330 8.00 8.38 Q 0.125 0.135 3.18 3.42 U 0.560 BSC 14.23 BSC MRF15030 7 ...

  • Page 8

    ... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *MRF15030/D* MOTOROLA RF DEVICE DATA MRF15030/D ...