MRF1518T1 Motorola, MRF1518T1 Datasheet

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MRF1518T1

Manufacturer Part Number
MRF1518T1
Description
The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR
Manufacturer
Motorola
Datasheet
( DataSheet : www.DataSheet4U.com )
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 12.5 volt mobile FM equipment.
(1) Calculated based on the formula P D =
REV 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Motorola, Inc. 2000
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T C = 25 C (1)
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
The MRF1518T1 is designed for broadband commercial and industrial
Specified Performance @ 520 MHz, 12.5 Volts
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
RF Power Plastic Surface Mount Package
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
Derate above 25 C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
Characteristic
Rating
T J – T C
R JC
G
D
S
Symbol
Symbol
V DSS
R JC
V GS
T stg
P D
T J
I D
MRF1518T1
LATERAL N–CHANNEL
RF POWER MOSFET
520 MHz, 8 W, 12.5 V
CASE 466–02, STYLE 1
– 65 to +150
BROADBAND
Value
62.5
0.50
Max
(PLD–1.5)
150
PLASTIC
40
4
2
20
Order this document
www.DataSheet4U.com
by MRF1518/D
MRF1518T1
Watts
W/ C
Unit
Unit
Vdc
Vdc
Adc
C/W
C
C
1

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MRF1518T1 Summary of contents

Page 1

... The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. ...

Page 2

... DS = 12.5 Vdc MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common–Source Amplifier Power Gain ( 12.5 Vdc, P out = 8 Watts 150 mA 520 MHz) Drain Efficiency ( 12.5 Vdc, P out = 8 Watts 150 mA 520 MHz) MRF1518T1 2 Symbol Min Typ Max I DSS — ...

Page 3

... Microstrip 0.155 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.065 x 0.080 Microstrip 0.266 x 0.080 Microstrip 1.113 x 0.080 Microstrip 0.433 x 0.080 Microstrip Glass Teflon , 31 mils, 2 oz. Copper 12.5 V 470 MHz 500 MHz 450 MHz 520 MHz versus Output Power MRF1518T1 3 ...

Page 4

... MHz 520 MHz 5 500 MHz SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage MRF1518T1 Figure 5. Drain Efficiency versus Output Power 70 470 MHz 65 450 MHz ...

Page 5

... Microstrip 0.260 x 0.223 Microstrip 0.239 x 0.080 Microstrip 0.286 x 0.080 Microstrip 0.806 x 0.080 Microstrip 0.553 x 0.080 Microstrip Glass Teflon , 31 mils, 2 oz. Copper 12.5 V 440 MHz 400 MHz 470 MHz out , OUTPUT POWER (WATTS) versus Output Power MRF1518T1 5 ...

Page 6

... Biasing Current 12 440 MHz 470 MHz SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage MRF1518T1 Figure 14. Drain Efficiency versus Output 70 470 MHz 65 440 MHz ...

Page 7

... Microstrip 0.260 x 0.223 Microstrip 0.125 x 0.080 Microstrip 0.962 x 0.080 Microstrip 0.305 x 0.080 Microstrip 0.155 x 0.080 Microstrip Glass Teflon , 31 mils, 2 oz. Copper 12.5 V 155 MHz 135 MHz 175 MHz out , OUTPUT POWER (WATTS) versus Output Power MRF1518T1 7 ...

Page 8

... Biasing Current 12 11 155 MHz SUPPLY VOLTAGE (VOLTS) Figure 26. Output Power versus Supply Voltage MRF1518T1 12 Figure 23. Drain Efficiency versus Output 70 175 MHz 155 MHz ...

Page 9

... 12 150 mA, P out = MHz 135 18.31 –j0.76 8.97 +j2.62 155 17.72 +j1.85 9.69 +j2.81 175 18.06 +j5.23 7.94 +j1. Complex conjugate of source impedance with parallel 15 resistor and 43 pF capacitor in series with gate. (See Figure 19 Complex conjugate of the load impedance at given output power, voltage, frequency, and D > MRF1518T1 9 ...

Page 10

... MHz | 0.91 –159 100 0.89 –169 200 0.88 –174 300 0.89 –175 400 0.89 –176 500 0.90 –176 600 0.92 –176 700 0.92 –176 800 0.93 –177 900 0.94 –177 1000 0.94 –178 MRF1518T1 150 18.91 99 0.033 9.40 86 0.033 4.47 73 0.026 2.72 64 0.025 1.85 56 0.021 1.35 52 0.019 1.04 47 0.014 0.83 44 0.015 0.68 39 0.014 0.55 36 0.010 ...

Page 11

... ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. 9 — can result in permanent GS ), whose value is application dependent. = 150 mA, which is the DQ may have DQ MRF1518T1 11 ...

Page 12

... Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.” Large–signal MRF1518T1 12 impedances are provided, and will yield a good first pass approximation. ...

Page 13

... MOTOROLA RF DEVICE DATA NOTES MRF1518T1 13 ...

Page 14

... MRF1518T1 14 NOTES MOTOROLA RF DEVICE DATA ...

Page 15

... MOTOROLA RF DEVICE DATA NOTES MRF1518T1 15 ...

Page 16

... Customer Focus Center: 1–800–521–6274 Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609 Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. – http://sps.motorola.com/mfax/ HOME PAGE: http://www.motorola.com/semiconductors/ MRF1518T1 16 PACKAGE DIMENSIONS _ 10 DRAFT U É ...

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