MRF19045R3 Motorola, MRF19045R3 Datasheet

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MRF19045R3

Manufacturer Part Number
MRF19045R3
Description
RF POWER FIELD EFFECT TRANSISTORS
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier
applications.
• Typical CDMA Performance @ 1960 MHz, 26 Volts, I
• 100% Tested Under 2–Carrier N–CDMA
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 3
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for PCN and PCS base station applications with frequencies from
Multi–carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
IM3 — –37 dBc
885 kHz: –50 dBc @ 30 kHz BW
C
= 25°C
Test Conditions
Characteristic
Rating
DQ
= 550 mA
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
D
J
MRF19045SR3
MRF19045R3
LATERAL N–CHANNEL
CASE 465E–03, STYLE 1
CASE 465F–03, STYLE 1
RF POWER MOSFETs
1990 MHz, 45 W, 26 V
MRF19045R3 MRF19045SR3
M3 (Minimum)
2 (Minimum)
–65 to +200
MRF19045SR3
–0.5, +15
MRF19045R3
Value
Class
0.60
Max
1.65
NI–400S
105
200
65
NI–400
Order this document
by MRF19045/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF19045R3 Summary of contents

Page 1

... LATERAL N–CHANNEL RF POWER MOSFETs CASE 465E–03, STYLE 1 CASE 465F–03, STYLE 1 Symbol V DSS stg T J Symbol R θJC MRF19045R3 MRF19045SR3 Order this document by MRF19045/D NI–400 MRF19045R3 NI–400S MRF19045SR3 Value Unit 65 Vdc –0.5, +15 Vdc 105 Watts 0.60 W/°C °C –65 to +200 ° ...

Page 2

... MHz Output Mismatch Stress ( Vdc CW 550 mA, DD out 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. MRF19045R3 MRF19045SR3 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I DSS I GSS V GS(th) V ...

Page 3

... Ph Rec. Hd. Screws, 0.625″ long MOTOROLA RF DEVICE DATA Z9 0.519″ x 0.254″ Microstrip Z10 0.874″ x 0.081″ Microstrip Z11 0.645″ x 0.081″ Microstrip Board 3″ x 5″ Copper Clad PCB, Arlon GX0300-55-22, ε = 2.55 r Printed Circuit CMR Part Number 19045PC5.SKF Board Description MRF19045R3 MRF19045SR3 3 ...

Page 4

... Figure 2. 1930 – 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout MRF19045R3 MRF19045SR3 4 C6 MRF19045/S Rev–0 MOTOROLA RF DEVICE DATA ...

Page 5

... MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS η η Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL and Drain Efficiency versus Output Power Figure 6. 2-Carrier N-CDMA ACPR Figure 8. CW Output Power, Power Gain and Drain Efficiency versus Input Power versus Output Power η MRF19045R3 MRF19045SR3 5 ...

Page 6

... Drain Efficiency versus Output Power Figure 11. CW Two-Tone Intermodulation Distortion versus Output Power Figure 13. CW Two-Tone Intermodulation Distortion Products versus Output Power MRF19045R3 MRF19045SR3 6 η Figure 10. CW Two-Tone Power Gain, Input Return Loss, IMD and Drain Efficiency versus Frequency Figure 12. CW Two-Tone Power Gain versus Output Power Figure 14 ...

Page 7

... Figure 15. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA Ω Ω Ω MHz 1930 15.52 + j16.5 4.52 + j1.86 1960 14.24 + j14.44 3.85 + j1.04 1990 11.11 + j13.01 3.44 + j0.69 = Complex conjugate of the optimum source impedance. impedance at a given output power, voltage, IMD, bias current and frequency MRF19045R3 MRF19045SR3 7 ...

Page 8

... MRF19045R3 MRF19045SR3 8 NOTES MOTOROLA RF DEVICE DATA ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF19045R3 MRF19045SR3 9 ...

Page 10

... MRF19045R3 MRF19045SR3 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... CASE 465F–03 ISSUE B NI–400S MRF19045SR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb H ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF19045R3 MRF19045SR3 11 ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF19045R3 MRF19045SR3 12 MOTOROLA RF DEVICE DATA MRF19045/D ...

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