MRF19120S Motorola, MRF19120S Datasheet
MRF19120S
Related parts for MRF19120S
MRF19120S Summary of contents
Page 1
... CASE 375D–04, STYLE 1 NI–1230 MRF19120 CASE 375E–03, STYLE 1 NI–1230S MRF19120S Symbol Value Unit V 65 Vdc DSS V –0.5, +15 Vdc GS P 389 Watts D 2.22 W/°C °C T –65 to +150 stg °C T 200 J Class 1 (Minimum) M3 (Minimum) Symbol Max Unit °C/W R 0.45 θJC MRF19120 MRF19120S 1 ...
Page 2
... MHz Common–Source Amplifier Power Gain ( Vdc 120 W CW out 1990.0 MHz) (1) Each side of device measured separately. (2) Device measured in push–pull configuration. MRF19120 MRF19120S 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I GSS I DSS GS(th) ...
Page 3
... MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (2) Device measured in push–pull configuration. MOTOROLA RF DEVICE DATA continued (T = 25°C unless otherwise noted) C Symbol η 500 mA, Ψ 500 mA, Min Typ Max Unit — 45 — Degradation In Output Power Before and After Test MRF19120 MRF19120S 3 ...
Page 4
... W Fixed Film Chip Resistors, Dale R3, R4 R5, R6 1.0 kΩ, 1/8 W Fixed Film Chip Resistors, Dale Z1 0.150″ x 0.080″ Microstrip Figure 1. 1.93 – 1.99 GHz Broadband Test Circuit Schematic MRF19120 MRF19120S 4 Z2 0.320″ x 0.080″ Microstrip Z4, Z5 1.050″ x 0.080″ Microstrip Z6, Z7 0.120″ ...
Page 5
... Figure 2. MRF19120 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF19120 MRF19120S 5 ...
Page 6
... Figure 3. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power η Figure 7. Power Gain, Efficiency, and IMD versus Output Power MRF19120 MRF19120S 6 TYPICAL CHARACTERISTICS Figure 4. Class AB Broadband Circuit Performance Figure 6. Intermodulation Distortion Products versus Output Power Figure 8. Power Gain, Efficiency, and ACPR versus Output Power η ...
Page 7
... Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA source load Ω Ω MHz 1930 1.64 + j2.6 3.9 + j1.7 1960 2.10 + j2.8 4.8 + j0.8 1990 2.10 + j1.4 4.9 + j0.3 = Test circuit impedance as measured from source gate to gate, balanced configuration. = Test circuit impedance as measured load from drain to drain, balanced configuration source load Ω MRF19120 MRF19120S 7 ...
Page 8
... MRF19120 MRF19120S 8 NOTES MOTOROLA RF DEVICE DATA ...
Page 9
... MOTOROLA RF DEVICE DATA NOTES MRF19120 MRF19120S 9 ...
Page 10
... MRF19120 MRF19120S 10 NOTES MOTOROLA RF DEVICE DATA ...
Page 11
... PLANE ISSUE C NI–1230S MRF19120S INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF19120 MRF19120S 11 ...
Page 12
... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF19120 MRF19120S 12 MOTOROLA RF DEVICE DATA MRF19120/D ...