MRF20060RS Motorola, MRF20060RS Datasheet

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MRF20060RS

Manufacturer Part Number
MRF20060RS
Description
RF POWER BIPOLAR TRANSISTOR
Manufacturer
Motorola
Datasheet
DataSheet4U.com
www.DataSheet4U.com
DataSheet
4
U
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron Bipolar Line
RF Power Bipolar Transistors
commercial and industrial applications at frequencies from 1800 to 2000 MHz.
The high gain, excellent linearity and broadband performance of these devices
make them ideal for large–signal, common emitter class AB amplifier applica-
tions. These devices are suitable for frequency modulated, amplitude modulated
and multi–carrier base station RF power amplifiers.
• Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP)
• Designed for FM, TDMA, CDMA and Multi–Carrier Applications
• Test Fixtures Available at: http://mot–sps.com/rf/designtds/
Note: Not suitable for class A operation.
REV 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
.com
Motorola, Inc. 2000
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage (I
Collector–Emitter Voltage
Collector–Base Voltage
Collector–Emitter Voltage (R
Base–Emitter Voltage
Collector Current – Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
The MRF20060R and MRF20060RS are designed for class AB broadband
Output Power
Derate above 25°C
Output Power — 60 Watts (PEP)
Power Gain — 9 dB
Efficiency — 33%
Intermodulation Distortion — –30 dBc
B
BE
C
= 0 mA)
= 25°C
= 100 Ohm)
Rating
Rating
DataSheet4U.com
Symbol
Symbol
V
V
V
V
R
V
T
P
CEO
CES
CBO
CER
T
I
θJC
stg
EB
C
D
J
MRF20060RS
MRF20060R
CASE 451A–03, STYLE 1
CASE 451–06, STYLE 1
– 65 to +150
MRF20060R MRF20060RS
60 W, 2000 MHz
(MRF20060RS)
NPN BIPOLAR
BROADBAND
(MRF20060R)
Value
1.43
Max
250
200
RF POWER
– 3
0.7
25
60
60
30
8
Order this document
by MRF20060R/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
°C
°C
1

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MRF20060RS Summary of contents

Page 1

... SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large–signal, common emitter class AB amplifier applica- tions. These devices are suitable for frequency modulated, amplitude modulated and multi– ...

Page 2

... Output Mismatch Stress ( Vdc Watts (PEP out f = 2000.0 MHz 2000.1 MHz, VSWR = 3:1, All Phase 1 2 Angles at Frequency of Test) (1) For Information Only. This Part Is Collector Matched. DataSheet4U.com MRF20060R MRF20060RS 2 4 DataSheet U .com (T = 25°C unless otherwise noted) C Symbol V (BR)CEO V (BR)CES ...

Page 3

... L2 inch of 20 AWG L3 12.5 nH Inductor 2 x 130 Ω, 1/8 W Chip Resistor, Rohm 100 Ω, 1/8 W Chip Resistor, Rohm R2 10 Ω, 1/2 W, Resistor R3 Transistor, PNP Motorola (BD136) Q2 Transistor, NPN Motorola (MJD47)  , Arlon GX–0300–55–22, ε Board Glass Teflon MRF20060R MRF20060RS r 3 ...

Page 4

... Figure 2. Output Power & Power Gain versus Input Power Figure 4. Intermodulation Distortion versus Output Power Figure 6. Intermodulation Distortion versus Output Power DataSheet4U.com MRF20060R MRF20060RS 4 4 DataSheet U .com TYPICAL CHARACTERISTICS Figure 3. Output Power versus Frequency DataSheet4U.com Figure 5. Power Gain and Intermodulation Distortion versus Supply Voltage Figure 7 ...

Page 5

... DataSheet4U.com MOTOROLA RF DEVICE DATA 4 DataSheet U .com η Figure 8. Performance in Broadband Circuit DataSheet4U.com ± Figure 9. MTBF Factor versus Junction Temperature ° MRF20060R MRF20060RS 5 ...

Page 6

... DataSheet4U.com MRF20060R MRF20060RS 6 4 DataSheet U .com Ω DataSheet4U.com f Z (1) in Ω MHz 1800 1.0 + j4.8 1850 1.5 + j4.8 1900 2.0 + j4.7 1950 2.5 + j4.7 2000 3.5 + j4.7 Z (1) = Conjugate of fixture base terminal impedance Conjugate of the optimum load impedance at OL given output power, voltage, bias current and frequency. Figure 10. Series Equivalent Input and Output Impedence ...

Page 7

... MRF20060R MRF20060RS ∠ f 169 169 169 169 168 169 170 171 174 174 172 170 169 168 167 167 166 165 ...

Page 8

... DataSheet4U.com MRF20060R MRF20060RS 8 4 DataSheet U .com NOTES DataSheet4U.com MOTOROLA RF DEVICE DATA ...

Page 9

... DataSheet4U.com MOTOROLA RF DEVICE DATA 4 DataSheet U .com NOTES DataSheet4U.com MRF20060R MRF20060RS 9 ...

Page 10

... DataSheet4U.com MRF20060R MRF20060RS 10 4 DataSheet U .com NOTES DataSheet4U.com MOTOROLA RF DEVICE DATA ...

Page 11

... DataSheet4U.com SEATING –T– PLANE –A– 3 CASE 451A–03 ISSUE B (MRF20060RS) INCHES MILLIMETERS DIM MIN MAX MIN MAX INCHES MILLIMETERS DIM MIN MAX MIN MAX MRF20060R MRF20060RS 11 ...

Page 12

... P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 Customer Focus Center: 1–800–521–6274 Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609 Motorola Fax Back System HOME PAGE: http://motorola.com/sps/ DataSheet4U.com MRF20060R MRF20060RS 12 4 DataSheet U .com DataSheet4U.com are registered trademarks of Motorola, Inc. Motorola, Inc Equal JAPAN: Motorola Japan Ltd. ...

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