MRF21030SR3 Motorola, MRF21030SR3 Datasheet

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MRF21030SR3

Manufacturer Part Number
MRF21030SR3
Description
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications.
• Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 6
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for PCN and PCS base station applications with frequencies from
Output Power
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 3.5 Watts
Power Gain — 14 dB
Efficiency — 15%
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
D
J
MRF21030SR3
MRF21030R3
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465E–03, STYLE 1
CASE 465F–03, STYLE 1
MRF21030R3 MRF21030SR3
2.2 GHz, 30 W, 28 V
M3 (Minimum)
2 (Minimum)
–65 to +200
MRF21030SR3
–0.5, +15
MRF21030R3
Value
Class
83.3
0.48
Max
200
NI–400S
2.1
65
NI–400
Order this document
by MRF21030/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF21030SR3 Summary of contents

Page 1

... CASE 465E–03, STYLE 1 NI–400 MRF21030R3 CASE 465F–03, STYLE 1 NI–400S MRF21030SR3 Symbol Value Unit V 65 Vdc DSS V –0.5, +15 Vdc GS P 83.3 Watts D 0.48 W/°C °C T –65 to +200 stg °C T 200 J Class 2 (Minimum) M3 (Minimum) Symbol Max Unit °C/W R 2.1 θJC MRF21030R3 MRF21030SR3 1 ...

Page 2

... MHz and f1 = 2170.0 MHz 2170.1 MHz) Output Mismatch Stress ( Vdc CW 250 mA, DD out 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. MRF21030R3 MRF21030SR3 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I DSS I GSS V ...

Page 3

... Microstrip Z6 0.200″ x 0.305″ Microstrip Z7 0.200″ x 0.511″ Microstrip Z8 0.510″ x 0.328″ Microstrip Z9 0.608″ x 0.081″ Microstrip  Board 0.030″ Glass Teflon , TLX8-0300 Taconix (ε = 2.55 MRF 21030 Rev 1 MRF21030 Rev–1 MRF21030R3 MRF21030SR3 3 ...

Page 4

... Figure 3. Class AB Broadband Circuit Performance Figure 5. Intermodulation Distortion versus Output Power Figure 7. Power Gain versus Output Power MRF21030R3 MRF21030SR3 4 TYPICAL CHARACTERISTICS Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage η ...

Page 5

... Complex conjugate of the optimum load OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA Ω Ω Ω MHz 2110 15.3 + j9.4 3.7 + j0.78 2140 14.6 + j9.4 3.4 + j0.37 2170 14.3 + j8.8 3.0 – j0.13 = Complex conjugate of source impedance. impedance at a given output power, voltage, IMD, bias current and frequency MRF21030R3 MRF21030SR3 5 ...

Page 6

... MRF21030R3 MRF21030SR3 6 NOTES MOTOROLA RF DEVICE DATA ...

Page 7

... CASE 465F–03 ISSUE B NI–400S MRF21030SR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc H INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF21030R3 MRF21030SR3 7 ...

Page 8

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF21030R3 MRF21030SR3 8 MOTOROLA RF DEVICE DATA MRF21030/D ...

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