MRF284LR1 Freescale Semiconductor, MRF284LR1 Datasheet

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MRF284LR1

Manufacturer Part Number
MRF284LR1
Description
RF Power Field Effect Transistors
Manufacturer
Freescale Semiconductor
Datasheet
www.DataSheet4U.com
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in Class A and Class AB for PCN - PCS/cellular radio
and wireless local loop.
• Specified Two - Tone Performance @ 2000 MHz, 26 Volts
• Typical Single - Tone Performance at 2000 MHz, 26 Volts
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 2. Thermal Characteristics
Table 3. Electrical Characteristics
Off Characteristics
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Designed for PCN and PCS base station applications with frequencies from
Output Power
Derate above 25°C
(V
(V
(V
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Intermodulation Distortion = - 29 dBc
Output Power = 30 Watts PEP
Power Gain = 9 dB
Efficiency = 30%
Output Power = 30 Watts CW
Power Gain = 9.5 dB
Efficiency = 45%
GS
DS
GS
= 0, I
= 20 Vdc, V
= 20 Vdc, V
D
= 10 μAdc)
GS
DS
= 0)
= 0)
Characteristic
C
= 25°C
Characteristic
Rating
(T
C
= 25°C unless otherwise noted)
V
Symbol
(BR)DSS
I
I
DSS
GSS
Symbol
Symbol
V
R
V
Min
T
P
T
65
DSS
T
θJC
GS
stg
D
C
J
CASE 360B - 05, STYLE 1
CASE 360C - 05, STYLE 1
MRF284LSR1
LATERAL N - CHANNEL
MRF284LR1
MRF284LSR1
Document Number: MRF284
RF POWER MOSFETs
2000 MHz, 30 W, 26 V
MRF284LR1
NI - 360S
Typ
NI - 360
BROADBAND
- 65 to +150
MRF284LR1 MRF284LSR1
- 0.5, +65
Value
Value
87.5
± 20
150
200
0.5
2.0
Max
1.0
10
Rev. 17, 5/2006
(continued)
W/°C
°C/W
μAdc
μAdc
Unit
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
1

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MRF284LR1 Summary of contents

Page 1

... T 150 C T 200 J Symbol Value R 2.0 θJC Symbol Min Typ Max V 65 — (BR)DSS I — — DSS I — — GSS MRF284LR1 MRF284LSR1 Rev. 17, 5/2006 Unit Vdc Vdc W W/°C °C °C °C Unit °C/W Unit — Vdc 1.0 μAdc 10 μAdc (continued) 1 ...

Page 2

... MHz 1930.1 MHz) Common - Source Amplifier Power Gain ( Vdc CW out 2000.0 MHz) Drain Efficiency ( Vdc CW out 2000.0 MHz) MRF284LR1 MRF284LSR1 2 (continued 25°C unless otherwise noted) C Symbol V GS(th) V GS(q) V DS(on iss ...

Page 3

... Z14 0.010″ x 0.325″ Microstrip Z15 0.505″ x 0.080″ Microstrip Z16 0.865″ x 0.080″ Microstrip Z17 0.525″ x 0.080″ Microstrip PCB Arlon GX0300 - 55 - 22, 0.030″, ε = 2.55 r Description MRF284LR1 MRF284LSR1 C17 C18 L3 RF OUTPUT Z16 Z17 3 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1930 - 2000 MHz Broadband Test Circuit Component Layout MRF284LR1 MRF284LSR1 ...

Page 5

... Microstrip Z13 0.02″ x 0.325″ Microstrip Z14 0.510″ x 0.080″ Microstrip Z15 0.990″ x 0.080″ Microstrip Z16 0.390″ x 0.080″ Microstrip PCB Arlon GX0300 - 55 - 22, 0.030″, ε = 2.55 r MRF284LR1 MRF284LSR1 R11 C15 C16 RF OUTPUT Z16 C17 5 ...

Page 6

... R11 MRF284LR1 MRF284LSR1 6 Description Ferrite Beads, Round, Ferroxcube # 56 - 590 - 100 μ Electrolytic Capacitors, Mallory #SME50VB101M12X25L 51 pF Chip Capacitors, ATC #100B510JCA500x 10 pF Chip Capacitors, ATC #100B100JCA500X 12 pF Chip Capacitors, ATC #100B120JCA500X 0.8 - 8.0 pF Variable Capacitor, Johansen Gigatrim #27291SL 4 ...

Page 7

... Distortion versus Supply Voltage I = 400 mA DQ 300 mA 200 Vdc 100 2000.0 MHz 2000.1 MHz 2 1 OUTPUT POWER (WATTS) PEP out Figure 9. Power Gain versus Output Power MRF284LR1 MRF284LSR1 2000 −10 − −20 −25 −30 IMD −35 − ...

Page 8

... P , INPUT POWER (dBm) in Figure 12. Class A Third Order Intercept Point 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 MRF284LR1 MRF284LSR1 8 TYPICAL CHARACTERISTICS 100 T = 75°C flange Figure 11. Capacitance versus Vdc (PEP), I out Two− ...

Page 9

... Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Test Matching Network Z Z source Figure 15. Series Equivalent Source and Load Impedence Z load = 15 W Avg. Z load Ω 2.1 + j0.4 2.2 - j0.2 2.3 - j0.5 2.5 - j0.9 2.6 - j0.92 Output Matching Network load MRF284LR1 MRF284LSR1 9 ...

Page 10

... MRF284LR1 MRF284LSR1 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... F 0.004 0.006 0.10 H 0.057 0.067 1.45 K 0.085 0.115 2.16 M 0.355 0.365 9.02 N 0.357 0.363 9.07 R 0.227 0.23 5.77 S 0.225 0.235 5. aaa 0.005 REF M M bbb 0.010 REF ccc 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF284LR1 MRF284LSR1 MILLIMETERS MIN MAX 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF MAX 9.78 5.97 3.94 5.59 1.14 0.15 1.70 2.92 9.27 9.22 5.92 5 ...

Page 12

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF284LR1 MRF284LSR1 Document Number: MRF284 Rev. 17, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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