MRF286S

Manufacturer Part NumberMRF286S
DescriptionThe RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
ManufacturerMotorola
MRF286S datasheet
 


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MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in class A and class AB for PCN–PCS/cellular radio
and WLL applications.
Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9.5 dB
Intermodulation Distortion — –28 dBc
Typical Two–Tone Performance at 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 10.5 dB
Efficiency — 32%
Intermodulation Distortion — –30 dBc
S–Parameter Characterization at High Bias Levels
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 60 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T C = 25 C
Derate above 25 C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
“PILOT PRODUCTION PROTOTYPE (“X” Status)” devices are preproduction products and may not be released or produced in volume.
“X” status devices are for engineering evaluation and should not be used for production. Specifications are subject to change without notice.
REV 3
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
Rating
Order this document
from WISD RF Marketing
MRF286
MRF286S
Order sample parts by XRF286,S
PILOT PRODUCTION PROTOTYPE
2000 MHz, 60 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–04, STYLE 1
(MRF286)
CASE 465A–04, STYLE 1
(MRF286S)
Symbol
Value
Unit
V DSS
65
Vdc
V GS
20
Vdc
P D
240
Watts
1.37
W/ C
T stg
– 65 to +150
C
T J
200
C
Symbol
Max
Unit
R JC
0.73
C/W
MRF286 MRF286S
1

MRF286S Summary of contents

  • Page 1

    ... MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 465–04, STYLE 1 (MRF286) CASE 465A–04, STYLE 1 (MRF286S) Symbol Value Unit V DSS 65 Vdc Vdc P D 240 Watts 1. stg – +150 200 C Symbol Max Unit R JC 0.73 C/W MRF286 MRF286S 1 ...

  • Page 2

    ... Vdc, P out = 60 W PEP 500 mA 2000.0 MHz 2000.1 MHz) Output Mismatch Stress ( Vdc, P out = 500 mA GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. MRF286 MRF286S unless otherwise noted) Symbol V (BR)DSS I GSS ...

  • Page 3

    ... Microstrip 0.544 x 0.080 Microstrip 0.108 x 0.080 Microstrip 0.095 x 0.080 Microstrip 0.996 x 0.080 Microstrip 0.077 x 0.080 Microstrip 0.030 Glass Teflon , 2 oz Copper Dimensions, Arlon GX0300–55–22 2. Copper Clad PCB, Glass Teflon , r = 2.55 Description MRF286 MRF286S C19 RF OUTPUT Z18 L4 3 ...

  • Page 4

    ... C1 C2 Figure 2. 1.93–2.0 GHz Broadband Test Circuit Component Layout MRF286 MRF286S C12 C13 C11 C6 C10 C9 MRF286/S Rev– Joersz MRF286/S Rev– Joersz Figure 3. MRF286 Test Circuit Photomaster (Reduced 18% in printed data book, DL110/D) ...

  • Page 5

    ... IMD, bias current and frequency. MOTOROLA RF DEVICE DATA 1.8 GHz 1.25 – j2.31 1.35 – j2.0 1.40 – j1.6 1.60 – j1.7 1.80 – j2.0 Input 1.85 – j2.1 Matching 1.90 – j2.18 Network Figure 4. Series Large–Signal Device Impedances f = 2.4 GHz 2.4 GHz f = 1.8 GHz Output Device Matching Under Test Network MRF286 MRF286S 5 ...

  • Page 6

    ... MRF286 MRF286S 6 Table 2. High Bias Small–Signal S–Parameters 3 0.458 8 0.02 0.406 5 0.02 0.357 1 0.03 0.324 –1 0.03 0.301 –3 0.03 0.290 –6 0.02 0.275 –9 ...

  • Page 7

    ... MILLIMETERS DIM MIN MAX MIN MAX A 0.805 0.815 20.45 20.70 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.055 0.065 1.40 1.65 K 0.170 0.210 4.32 5.33 N 0.775 0.785 19.69 19. 0.365 0.375 9.27 9.53 S 0.020 REF 0.51 REF U 0.030 REF 0.76 REF STYLE 1: PIN 1. DRAIN F 2. GATE 4. SOURCE MRF286 MRF286S 7 ...

  • Page 8

    ... ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF286 MRF286S 8 are registered trademarks of Motorola, Inc. Motorola, Inc Equal MOTOROLA RF DEVICE DATA MRF286, MRF286S PILOT PRODUCTION PROTOTYPE DATA SHEET ...