MRF286S Motorola, MRF286S Datasheet - Page 2

• Manufacturer Part Number: MRF286S
• Description: The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
• Manufacturer: Motorola

www.DataSheet4U.com
(1) Part is internally matched both on input and output.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture)
MRF286 MRF286S
2
Drain–Source Breakdown Voltage
Gate–Source Leakage Current
Zero Gate Voltage Drain Leakage Current
Forward Transconductance
Gate Threshold Voltage
Gate Quiescent Voltage
Drain–Source On–Voltage
Reverse Transfer Capacitance
Input Capacitance (1)
Output Capacitance
Common–Source Amplifier Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
Output Mismatch Stress
(V GS = 0, I D = 20 Adc)
(V GS = 20 Vdc, V DS = 0 Vdc)
(V DS = 28 Vdc, V GS = 0)
(V DS = 10 Vdc, I D = 2 Adc)
(V DS = 10 V, I D = 300 A)
(V DS = 26 V, I D = 500 mA)
(V GS = 10 V, I D = 1 A)
(V DS = 26 Vdc, V GS = 0, f = 1 MHz)
(V DS = 26 Vdc, V GS = 0, f = 1 MHz)
(V DS = 26 Vdc, V GS = 0, f = 1 MHz)
(V DD = 26 Vdc, P out = 60 W PEP, I DQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
(V DD = 26 Vdc, P out = 60 W PEP, I DQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
(V DD = 26 Vdc, P out = 60 W PEP, I DQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
(V DD = 26 Vdc, P out = 60 W PEP, I DQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
(V DD = 26 Vdc, P out = 60 W CW, I DQ = 500 mA,
f = 2 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Characteristic
(T C = 25 C unless otherwise noted)
V (BR)DSS
V DS(on)
Symbol
V GS(th)
V GS(Q)
I GSS
I DSS
C oss
C rss
C iss
G ps
IMD
IRL
g fs
Min
9.5
65
28
—
—
—
—
—
—
—
—
—
2
3
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
4.15
0.16
10.5
Typ
145
–12
3.2
—
—
—
51
32
30
3
3
Max
–28
0.6
10
–9
—
—
—
—
—
—
—
1
4
5
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dB
dB
Adc
Adc
pF
pF
pF
%
S