MRF5811LT1 Motorola, MRF5811LT1 Datasheet

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MRF5811LT1

Manufacturer Part Number
MRF5811LT1
Description
NPN Silicon High Frequency Transistor
Manufacturer
Motorola
Datasheet
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
REV 1
MAXIMUM RATINGS
DEVICE MARKING
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Thermal Resistance JC (1)
Total Device Dissipation @ T C = 75 C
Storage Junction Temperature Range
Maximum Junction Temperature
MRF5811L = 20
NOTES:
Motorola, Inc. 1995
MOTOROLA RF DEVICE DATA
Designed for high current, low power amplifiers up to 1.0 GHz.
Low Noise (2.0 dB @ 500 MHz)
Low Intermodulation Distortion
High Gain
State–of–the–Art Technology
Excellent Dynamic Range
Fully Characterized
High Current–Gain Bandwidth Product
Available in Tape and Reel by Adding T1 Suffix to Part Number.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
Derate above T C = 75 C
1. Case temperature measured on collector lead immediately adjacent to body of package.
Fine Line Geometry
Arsenic Emitters
Gold Top Metallization
Nichrome Thin–Film Ballasting Resistors
Rating
Symbol
T Jmax
V CEO
V CBO
V EBO
R JC
T stg
P D
I C
MRF5811LT1
– 55 to +150
CASE 318A–05, STYLE 1
HIGH–FREQUENCY
Value
0.71
200
106
150
2.5
9.4
18
36
TRANSISTOR
NPN SILICON
I C = 200 mA
LOW NOISE
Order this document
by MRF5811LT1/D
MRF5811LT1
mW/ C
mAdc
Watts
Unit
Vdc
Vdc
Vdc
C/W
C
C
1

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MRF5811LT1 Summary of contents

Page 1

... DEVICE MARKING MRF5811L = 20 NOTES: 1. Case temperature measured on collector lead immediately adjacent to body of package. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 1995 www.DataSheet4U.com Rating Order this document by MRF5811LT1/D MRF5811LT1 200 mA LOW NOISE HIGH–FREQUENCY TRANSISTOR NPN SILICON CASE 318A–05, STYLE 1 Symbol Value ...

Page 2

... mAdc Vdc 500 MHz) Insertion Gain ( mAdc 6.0 Vdc 500 MHz) Maximum Unilateral Gain ( mAdc 6.0 Vdc 500 MHz) NOTES: 1. 300 s pulse on Tektronix 576 or equivalent Umax = (1 – )(1 – MRF5811LT1 2 Symbol Min Typ Max V (BR)CEO 18 — — ...

Page 3

... Figure 5. G U(max) Maximum Unilateral Gain MHz COLLECTOR–BASE (VOLTS) Capacitance versus Voltage Vdc RF OUTPUT *BIAS TEE G U(max Vdc 0 FREQUENCY (GHz versus Frequency MRF5811LT1 3 ...

Page 4

... Figure 6. MSG — Maximum Stable Gain, MAG — Maximum Available Gain versus Frequency Figure 8. Noise Figure and Gain @ Minimum V CE (Vdc (mA) f (MHz) 6 Table 1. Common Emitter Noise Parameters MRF5811LT1 MSG MAG Vdc 2 ...

Page 5

... MRF5811LT1 5 ...

Page 6

... Table 2. Common Emitter S–Parameters (continued) MRF5811LT1 –149 18.83 109 0.035 –167 9.95 95 0.041 –175 6.72 88 0.047 –179 5.07 83 0.053 176 4.08 81 0.061 173 3.42 77 0.068 170 2 ...

Page 7

... MRF5811LT1 7 ...

Page 8

... Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *MRF5811LT1/D* INCHES MAX MIN MAX 3.04 0.110 0.120 1.39 0.047 0.055 1.14 0.033 0.045 0.50 0.015 0.020 0.93 0.031 0.037 2.03 0.070 0.080 0.10 0.0005 0.004 0.15 0.003 0.006 0.60 0.018 0.024 0.60 0.0175 0.024 0.83 0.028 0.033 2.48 0.083 0.098 MRF5811LT1/D MOTOROLA RF DEVICE DATA ...

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