MRF5S19150SR3 Motorola, MRF5S19150SR3 Datasheet

MRF5S19150SR3

Manufacturer Part Number

MRF5S19150SR3

Description

RF Power Field Effect Transistors

Manufacturer

Motorola

Datasheet

1.MRF5S19150SR3.pdf (12 pages)

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

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

• Typical 2 - Carrier N - CDMA Performance for V

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,

• Excellent Thermal Stability

• Qualified Up to a Maximum of 32 V Operation

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

REV 1

(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to

(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .

Motorola, Inc. 2004

MRF5S19150R3 and MRF5S19150SR3 replaced by MRF5S19150HR3 and

MRF5S19150HSR3. “H” suffix indicates lower thermal resistance package.

MOTOROLA RF DEVICE DATA

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

CW Operation

Thermal Resistance, Junction to Case

Designed for PCN and PCS base station applications at frequencies from

IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)

1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured

over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion

Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and

f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

100 Watts CW Output Power

Derate above 25°C

Case Temperature 80°C, 100 W CW

Case Temperature 80°C, 32 W CW

access the MTTF calculators by product.

Select Documentation/Application Notes - AN1955.

out

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Output Power — 32 Watts Avg.

Power Gain — 14 dB

Efficiency — 26%

ACPR — - 50 dB

IM3 — - 36.5 dBc

= 32 Watts, I

= 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz

= 25°C

Characteristic

www.DataSheet4U.com

Freescale Semiconductor, Inc.

For More Information On This Product,

Rating

For More Information On This Product,

Go to: www.freescale.com

= 28 Volts,

Symbol

DSS

θJC

stg

MRF5S19150SR3

CASE 465B - 03, STYLE 1

CASE 465C - 02, STYLE 1

MRF5S19150R3

MRF5S19150R3 MRF5S19150SR3

MRF5S19150SR3

MRF5S19150R3

LATERAL N - CHANNEL

RF POWER MOSFETs

NI - 880S

1990 MHz, 32 W, 28 V

NI - 880

- 65 to +150

Value (1,2)

- 0.5, +15

Value

0.49

0.53

357

200

100

Order this document

by MRF5S19150/D

Watts

W/°C

°C/W

Unit

Vdc

°C

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