MRF5S21150R3 Motorola Inc, MRF5S21150R3 Datasheet

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MRF5S21150R3

Manufacturer Part Number
MRF5S21150R3
Description
RF POWER FIELD EFFECT TRANSISTORS
Manufacturer
Motorola Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance for V
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
REV 2
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Motorola, Inc. 2004
MOTOROLA RF DEVICE DATA
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
CW Operation
Thermal Resistance, Junction to Case
Designed for W- CDMA base station applications with frequencies from 2110
I
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power
DQ
Derate above 25°C
Case Temperature 80°C, 125 W CW
Case Temperature 80°C, 33 W CW
access the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 33 Watts Avg.
Power Gain — 12.5 dB
Efficiency — 25%
IM3 — - 37 dBc
ACPR — - 39 dBc
= 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
C
= 25°C
Freescale Semiconductor, Inc.
Characteristic
For More Information On This Product,
Rating
DD
Operation
Go to: www.freescale.com
DD
= 28 Volts,
-
5 MHz
Symbol
Symbol
V
R
V
T
CW
P
DSS
T
θJC
GS
stg
MRF5S21150SR3
D
J
CASE 465B - 03, STYLE 1
MRF5S21150R3
CASE 465C - 02, STYLE 1
MRF5S21150R3 MRF5S21150SR3
MRF5S21150SR3
MRF5S21150R3
LATERAL N - CHANNEL
2170 MHz, 33 W AVG.,
RF POWER MOSFETs
NI - 880S
NI - 880
2 x W - CDMA, 28 V
Value (1)(2)
- 65 to +150
- 0.5, +15
Value
0.47
0.53
367
200
125
2.1
65
Order this document
by MRF5S21150/D
Watts
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF5S21150R3 Summary of contents

Page 1

... CASE 465B - 03, STYLE 880 MRF5S21150R3 CASE 465C - 02, STYLE 880S MRF5S21150SR3 Symbol Value Unit V 65 Vdc DSS V - 0.5, +15 Vdc GS P 367 Watts D 2.1 W/° +150 °C stg T 200 ° 125 Watts Symbol Value (1)(2) Unit R °C/W θJC 0.47 0.53 MRF5S21150R3 MRF5S21150SR3 1 ...

Page 2

... MHz MHz and f2 +5 MHz.) Input Return Loss ( Vdc Avg 1300 mA 2112.5 MHz, DD out 2122.5 MHz and f1 = 2157.5 MHz 2167.5 MHz) (1) Part is internally matched both on input and output. MRF5S21150R3 MRF5S21150SR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS ...

Page 3

... Taconic TLX8, 0.030″, ε Description Value, P/N or DWG TAJE226M035R 100B6R8CW 100B1R8BW 1812Y224KXA 293D1106X9035D 100B0R3BW 13661471 Go to: www.freescale.com V supply + + + C10 C11 C12 C20 C19 Z14 Z15 Z16 Z17 RF OUTPUT C17 C18 + + C14 C15 C16 = 2.55 r Manufacturer AVX ATC ATC Vishay - Vitramon Vishay - Sprague ATC Philips MRF5S21150R3 MRF5S21150SR3 3 ...

Page 4

... Freescale Semiconductor, Inc Figure 2. MRF5S21150 Test Circuit Component Layout MRF5S21150R3 MRF5S21150SR3 4 C11 C12 C9 C5 C10 C13 C14 C15 C16 For More Information On This Product, Go to: www.freescale.com C20 C19 C17 C18 MRF5S21150 Rev 0 MOTOROLA RF DEVICE DATA ...

Page 5

... Two−Tone Measurement, 10 MHz Tone Spacing 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power Ideal P3dB = 53.58 dBm (228 W) Actual Vdc 1300 Pulsed CW, 5 µsec(on), 1 msec(off) Center Frequency = 2140 MHz INPUT POWER (dBm) in Input Power MRF5S21150R3 MRF5S21150SR3 1000 ...

Page 6

... Output Power 100 10 1 0.1 0.01 0.001 0.0001 PEAK−TO−AVERAGE (dB) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal MRF5S21150R3 MRF5S21150SR3 6 TYPICAL CHARACTERISTICS −20 −25 −30 −30 −40 IM3 −50 −35 ACPR −60 −40 −70 − ...

Page 7

... MHz Ω Ω 2080 3.05 - j9.66 1.02 - j2.94 2110 3.97 - j10.31 1.09 - j2.51 2140 4.70 - j11.03 1.16 - j2.46 2170 5.45 - j12.41 1.16 - j2.58 2200 6.18 - j13.04 1.02 - j2.55 = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground. Output Device Matching Under Network Test Z Z source load Go to: www.freescale.com MRF5S21150R3 MRF5S21150SR3 7 ...

Page 8

... Freescale Semiconductor, Inc. MRF5S21150R3 MRF5S21150SR3 8 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 9

... Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, NOTES Go to: www.freescale.com MRF5S21150R3 MRF5S21150SR3 9 ...

Page 10

... Freescale Semiconductor, Inc. MRF5S21150R3 MRF5S21150SR3 10 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 11

... D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF5S21150R3 MRF5S21150SR3 11 ...

Page 12

... E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 MRF5S21150R3 MRF5S21150SR3 ◊ 12 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N ...

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