MRF6401 Motorola, MRF6401 Datasheet

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MRF6401

Manufacturer Part Number
MRF6401
Description
RF LINEAR POWER TRANSISTOR
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically
designed for use in Personal Communications Network (PCN) base station and
INMARSAT Standard M applications.
REV 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
(1) Thermal resistance is determined under specified RF operating condition.
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Operating Junction Temperature
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Thermal Resistance, Junction to Case (1)
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Base Breakdown Voltage
The MRF6401 is designed for Class A common emitter, linear power
Motorola, Inc. 1995
Specified 20 Volts, 1.66 GHz Characteristics:
Specified 20 Volts, 1.88 GHz Characteristics:
Circuit Board Photomaster Available by Ordering Document
MRF6401PHT/D from Motorola Literature Distribution.
Derate above 25 C
(I C = 10 mAdc, R B = 75 )
(I E = 0.25 mAdc)
(I C = 1 mAdc)
Output Power — 0.5 Watts
Gain — 10 dB Min
Class A Operation
Output Power — 0.5 Watts
Gain — 9.0 dB Min
Class A Operation
Characteristic
Characteristic
Rating
(T C = 25 C unless otherwise noted)
V (BR)CBO
V (BR)CER
V (BR)EBO
Symbol
Symbol
Symbol
V CEO
V CBO
V EBO
R JC
T stg
Min
P D
3.5
T J
28
45
CASE 305C–02, STYLE 1
Typ
MRF6401
POWER TRANSISTOR
0.5 W, 1.0 to 2.0 GHz
– 65 to +150
SOE200–PILL
Value
0.033
Max
200
RF LINEAR
3.5
5.8
22
45
30
Max
Order this document
by MRF6401/D
MRF6401
Watts
W/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
C/W
C
C
1

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MRF6401 Summary of contents

Page 1

... SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network (PCN) base station and INMARSAT Standard M applications. Specified 20 Volts, 1.66 GHz Characteristics: Output Power — ...

Page 2

... TL7 TL9 RF OUTPUT TL8 470 , Chip Resistor 0805 4 Chip Resistor 0805 8 Chip Resistor 0805 SMD Potentiometer 680 , Chip Resistor 0805 7.5 , Chip Resistor 0805 Strip Lines; See Photomaster Document, MRF6401PHT/D Strip Taper; See Photomaster Document, MRF6401PHT/D MOTOROLA RF DEVICE DATA ...

Page 3

... MHz INPUT POWER (mW – 5 –10 –15 S22 – 1500 1600 Figure 4. Performance in Broadband Test Fixture 100 S21 dBm S11 S11 S22 1700 1800 1900 2000 2100 f, FREQUENCY (MHz) MRF6401 3 ...

Page 4

... GND Î Î Î Î C9 Î Î C10 C4 C3 Figure 5. Test Circuit Components Layout MRF6401 4 Table 1. Common Emitter S–Parameters SYSTEM POLAR S–PARAMETERS é é MHz MHz | 0.649 – 40 100 0.618 – ...

Page 5

... Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 INCHES DIM MIN A 0.200 0.210 C ––– 0.125 D 0.120 0.130 F 0.025 0.035 H 0.035 0.045 J 0.004 0.006 K 0.970 1.030 STYLE 1: PIN 1. EMITTER C CASE 305C–02 ISSUE A MILLIMETERS MAX MIN MAX 5.08 5.33 ––– 3.17 3.05 3.30 0.64 0.88 0.88 1.14 0.11 0.15 24.64 26.16 2. BASE 3. EMITTER 4. COLLECTOR MRF6401 5 ...

Page 6

... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *MRF6401/D* MOTOROLA RF DEVICE DATA MRF6401/D ...

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