MRF6402 Motorola, MRF6402 Datasheet

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MRF6402

Manufacturer Part Number
MRF6402
Description
RF POWER TRANSISTOR NPN SILICON
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
(PCN) base stations applications. It incorporates high value emitter ballast
resistors, gold metallizations and offers a high degree of reliability and
ruggedness. For ease of design, this transistor has an internally matched input.
(1) Thermal resistance is determined under specified RF operating condition.
REV 7
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case (1)
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Base Breakdown Voltage (I C = 10 mAdc)
Collector–Emitter Leakage (V CE = 26 V, R BE = 75 )
The MRF6402 is designed for 1.8 GHz Personal Communications Network
Motorola, Inc. 1997
To be used in Class AB for PCN and Cellular Radio Applications
Specified 26 V, 1.88 GHz Characteristics
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Derate above 25 C
(I C = 10 mA, R BE = 75 )
(I E = 5 mAdc)
Output Power — 4.5 Watts
Gain — 10 dB Typ
Efficiency — 45% Typ
Characteristic
Characteristic
Rating
(T C = 25 C unless otherwise noted.)
V (BR)CBO
V (BR)CER
V (BR)EBO
Symbol
I CER
Symbol
Symbol
V CER
V CBO
V EBO
R JC
T stg
Min
P D
3.5
T J
40
40
I C
RF POWER TRANSISTOR
Typ
CASE 319–07, STYLE 2
MRF6402
– 65 to +150
4.5 W, 1.88 GHz
NPN SILICON
Value
Max
200
3.5
0.7
0.2
40
45
15
5
Max
Order this document
5
by MRF6402/D
MRF6402
(continued)
Watts
W/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
Adc
Vdc
Vdc
Vdc
C/W
mA
C
C
1

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MRF6402 Summary of contents

Page 1

... The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has an internally matched input. ...

Page 2

... 1.95 GHz (GHz 1.75 0.12 + j0.18 1.84 0.13 + j0.2 1.95 0.15 + j0.16 Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain MRF6402 unless otherwise noted.) Symbol Min Conjugate of optimum load impedance into which the device operates at a 0.06 + j0.05 given output power, voltage, current ...

Page 3

... Turns, Wire 0.5 mm Ferrite Bead, SMD Fair–Rite Trimmer R1 2 Chip Resistor, 1206 R3 1 1/4 W, 5%, Resistor R4 100 , 3 W, Power Resistor T Transistor, BD135 3rd Order 5th 7th C11 Output Chip Resistor, 0805 MRF6402 3 ...

Page 4

... E 0.102 0.114 2.59 2.90 F 0.075 0.085 1.91 2.15 H 0.160 0.170 4.07 4.31 J 0.004 0.006 0.11 0.15 K 0.090 0.110 2.29 2.79 L 0.725 BSC 18.42 BSC N 0.225 0.241 5.72 6.12 Q 0.125 3.18 0.135 3.42 PIN 1. EMITTER (COMMON) 2. BASE (INPUT) 3. EMITTER (COMMON) 4. EMITTER (COMMON) 5. COLLECTOR (OUTPUT) 6. EMITTER (COMMON) Mfax is a trademark of Motorola, Inc. MRF6402/D MOTOROLA RF DEVICE DATA ...

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