MRF6409 Motorola, MRF6409 Datasheet

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MRF6409

Manufacturer Part Number
MRF6409
Description
RF POWER TRANSISTOR NPN SILICON
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
rates high value emitter ballast resistors, gold metallizations and offers a high
degree of reliability and ruggedness.
(1) Thermal resistance is determined under specified RF operating condition.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case (1)
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Collector–Cutoff Current
The MRF6409 is designed for GSM base stations applications. It incorpo-
Motorola, Inc. 1997
To be used in Class AB
Specified 26 Volts, 960 MHz Characteristics
Derate above 25 C
(I C = 20 mAdc, I B = 0)
(I B = 5.0 mAdc, I C =0)
(I C = 20 mAdc, V BE = 0)
(V CE = 30 Vdc, V BE = 0)
Output Power — 20 Watts CW
Gain — 11 dB Typ
Efficiency — 60% Typ
Characteristic
Characteristic
Rating
(T C = 25 C unless otherwise noted)
V (BR)CEO
V (BR)EBO
V (BR)CES
Symbol
I CES
Symbol
Symbol
V CEO
V CES
V EBO
R JC
T stg
Min
P D
4.0
T J
24
55
I C
RF POWER TRANSISTOR
Typ
5.0
CASE 319–07, STYLE 2
30
60
MRF6409
– 65 to +150
20 W, 960 MHz
NPN SILICON
Value
0.26
Max
200
4.0
5.0
3.8
24
55
45
Max
6.0
Order this document
by MRF6409/D
MRF6409
Watts
W/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
Adc
Vdc
Vdc
Vdc
C/W
mA
C
C
1

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MRF6409 Summary of contents

Page 1

... SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorpo- rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness used in Class AB Specified 26 Volts, 960 MHz Characteristics Output Power — ...

Page 2

... Chip Capacitor, High Q C2, C3 4.7 pF, Chip Capacitor, High Q C4 2.2 pF, Chip Capacitor, High pF, Chip Capacitor, High Q C6, C9 330 pF, Chip Capacitor, High Q C7, C10 0.1 F, Chip Capacitor Tantalum Capacitor MRF6409 unless otherwise noted) Symbol Min — ...

Page 3

... P out , OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion 940 950 960 970 f, FREQUENCY (MHz) 70% 60% 50% 40 960 MHz 10 versus Output Power 960 MHz f2 = 960, 1 MHz 1.0 10 versus Output Power MRF6409 3 ...

Page 4

... Z in (MHz 920 1.4 + j3.0 940 1.5 + j3.9 960 1.5 + j4.2 980 1.6 + j4.4 Figure 8. Input and Output Impedances with Circuit Tuned for Maximum Gain @ mA, P out = 20 W (CW) MRF6409 980 MHz Z in 920 920 f = 980 MHz 3.2 – j2 Conjugate of optimum load impedance into which the device operates at a 3.5 – ...

Page 5

... Figure 9. 960 MHz Test Circuit RF, Photomaster Scale 1:1 (Reduced 25% in printed data book, DL110/ Figure 10. 960 MHz Test Circuit RF, Photomaster Scale 1:1 (Reduced 25% in printed data book, DL110/D) MOTOROLA RF DEVICE DATA and Components Location C10 C11 C5 C4 MRF6409 5 ...

Page 6

... E 0.102 0.114 2.59 2.90 F 0.075 0.085 1.91 2.15 H 0.160 0.170 4.07 4.31 J 0.004 0.006 0.11 0.15 K 0.090 0.110 2.29 2.79 L 0.725 BSC 18.42 BSC N 0.225 0.241 5.72 6.12 Q 0.125 0.135 3.18 3.42 STYLE 2: PIN 1. EMITTER (COMMON) 2. BASE (INPUT) 3. EMITTER (COMMON) 4. EMITTER (COMMON) 5. COLLECTOR (OUTPUT) 6. EMITTER (COMMON) Mfax is a trademark of Motorola, Inc. MRF6409/D MOTOROLA RF DEVICE DATA ...

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