MRF6S9045 Freescale Semiconductor, MRF6S9045 Datasheet

MRF6S9045

Manufacturer Part Number

MRF6S9045

Description

RF Power Field Effect Transistors

Manufacturer

Freescale Semiconductor

Datasheet

1.MRF6S9045.pdf (16 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MRF6S9045MR1

Manufacturer:

MURATA

Quantity:

120 000

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large - signal, common - source amplifier

applications in 28 volt base station equipment.

• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V

GSM EDGE Application

• Typical GSM EDGE Performance: V

GSM Application

• Typical GSM Performance: V

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Integrated ESD Protection

• N Suffix Indicates Lead - Free Terminations

• 200°C Capable Plastic Package

• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

Table 1. Maximum Ratings

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Designed for broadband commercial and industrial applications with

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Full Frequency Band (921 - 960 MHz)

Output Power

13 inch Reel.

Derate above 25°C

out

Power Gain — 20 dB

Drain Efficiency — 68%

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Power Gain — 22.7 dB

Drain Efficiency — 32%

ACPR @ 750 kHz Offset — - 47 dBc @ 30 kHz Bandwidth

Power Gain — 20 dB

Drain Efficiency — 46%

Spectral Regrowth @ 400 kHz Offset = - 62 dBc

Spectral Regrowth @ 600 kHz Offset = - 78 dBc

EVM — 1.5% rms

= 350 mA, P

= 16 Watts Avg., Full Frequency Band (921 - 960 MHz)

out

= 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,

= 25°C

= 28 Volts, I

Rating

= 28 Volts, I

= 350 mA, P

MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1

= 350 mA,

out

= 45 Watts,

= 28 Volts,

Symbol

DSS

stg

BROADBAND RF POWER MOSFETs

Document Number: MRF6S9045

MRF6S9045MBR1

MRF6S9045NBR1

MRF6S9045MR1

MRF6S9045NR1

880 MHz, 10 W AVG., 28 V

LATERAL N - CHANNEL

CASE 1265- 08, STYLE 1

MRF6S9045NR1(MR1)

MRF6S9045NBR1(MBR1)

CASE 1337 - 03, STYLE 1

SINGLE N - CDMA

- 65 to +150

- 0.5, +68

- 0.5, + 12

TO - 270 - 2

Value

PLASTIC

175

200

TO - 272 - 2

1.0

PLASTIC

Rev. 1, 6/2005

W/°C

Unit

Vdc

°C

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