MRF6S9060 Freescale Semiconductor, MRF6S9060 Datasheet

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MRF6S9060

Manufacturer Part Number
MRF6S9060
Description
RF Power Field Effect Transistors
Manufacturer
Freescale Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF6S9060NBR1
Quantity:
373
Part Number:
MRF6S9060NR1
Manufacturer:
FREESCALE
Quantity:
105
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
GSM EDGE Application
• Typical GSM EDGE Performance: V
GSM Application
• Typical GSM Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Designed for broadband commercial and industrial applications with
I
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
P
Full Frequency Band (921 - 960 MHz)
Output Power
13 inch Reel.
13 inch Reel.
DQ
Derate above 25°C
out
Power Gain — 20 dB
Drain Efficiency — 63%
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — - 47.6 dBc @ 30 kHz Bandwidth
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
= 450 mA, P
= 21 Watts Avg., Full Frequency Band (921 - 960 MHz)
out
= 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
C
= 25°C
DD
= 28 Volts, I
Rating
DD
= 28 Volts, I
DQ
= 500 mA, P
MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1
DQ
= 500 mA,
out
DD
= 60 Watts,
= 28 Volts,
Symbol
V
V
T
P
DSS
T
GS
stg
D
J
BROADBAND RF POWER MOSFETs
Document Number: MRF6S9060
MRF6S9060MBR1
MRF6S9060NBR1
MRF6S9060MR1
MRF6S9060NR1
880 MHz, 14 W AVG., 28 V
LATERAL N - CHANNEL
MRF6S9060NBR1(MBR1)
CASE 1337 - 03, STYLE 1
CASE 1265- 08, STYLE 1
MRF6S9060NR1(MR1)
SINGLE N - CDMA
- 65 to +150
- 0.5, +68
- 0.5, + 12
Value
TO - 270 - 2
TO - 272 - 2
PLASTIC
PLASTIC
227
200
1.3
Rev. 1, 6/2005
W/°C
Unit
Vdc
Vdc
°C
°C
W
1

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MRF6S9060 Summary of contents

Page 1

... RF Device Data Freescale Semiconductor = 28 Volts Volts 500 mA 500 mA Watts, DQ out MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 Document Number: MRF6S9060 Rev. 1, 6/2005 MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 880 MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265- 08, STYLE 1 ...

Page 2

... Input Return Loss 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 2 Rating 3 = 25°C unless otherwise noted) ...

Page 3

... Compression Point out (f = 940 MHz) RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol G ps η D EVM SR1 SR2 G ps η D IRL P1dB MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 Min Typ Max Unit — 20 — dB — 46 — % — 1.5 — % — — dBc — ...

Page 4

... Z6 0.280″ x 0.270″ x 0.530″ Taper Z7 0.087″ x 0.525″ Microstrip Z8 0.435″ x 0.525″ Microstrip Figure 1. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Schematic Table 6. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values Part B1 Ferrite Bead B2 Ferrite Bead C1, C8, C14, C15 47 pF Chip Capacitors C2, C4, C13 0 ...

Page 5

... Figure 2. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C19 B2 C8 C15 C11 C10 MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 V DD C16 C17 R4 C18 C12 C14 C13 TO−270/272 Surface / Bolt down 5 ...

Page 6

... Vdc 880 MHz 880.1 MHz DD Two −Tone Measurements, 100 kHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 6 TYPICAL CHARACTERISTICS = 28 Vdc (Avg.), I = 450 mA out IRL ...

Page 7

... 25_C 85_C ps C −30_C OUTPUT POWER (WATTS) AVG. out Gain and Drain Efficiency versus Output Power MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 = 28 Vdc (PEP) out = 450 mA, Two −Tone Measurements 1 10 TWO −TONE SPACING (MHz) versus Tone Spacing Ideal Actual 31 32 ...

Page 8

... Figure 13. MTTF Factor versus Junction Temperature MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 8 TYPICAL CHARACTERISTICS −30_C T = −30_C 25_C 85_C η Vdc 450 880 MHz OUTPUT POWER (WATTS) CW out Figure 11. Power Gain and Drain Efficiency ...

Page 9

... N - CDMA TEST SIGNAL −10 −20 −30 −40 −50 −60 −70 −80 − −100 −110 −3.6 −2.9 Figure 15. Single - Carrier N - CDMA Spectrum MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 1.2288 MHz Channel BW −ACPR @ 30 kHz +ACPR @ 30 kHz Integrated BW Integrated BW −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 f, FREQUENCY (MHz) 3.6 9 ...

Page 10

... 910 MHz Z source f = 850 MHz Z Z Figure 16. Series Equivalent Source and Load Impedance MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 Ω 910 MHz Z load f = 850 MHz Vdc 450 mA Avg out source load MHz Ω Ω 850 0.44 - j0.20 2.28 + j0.23 865 ...

Page 11

... RF Device Data Freescale Semiconductor NOTES MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 11 ...

Page 12

... MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 12 NOTES RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 13 ...

Page 14

... aaa PIN 2 D2 PIN 3 c1 DATUM H PLANE A1 A2 NOTE 7 MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 14 PACKAGE DIMENSIONS PIN ONE EXPOSED Ç Ç Ç Ç HEATSINK AREA Ç Ç Ç Ç PIN 1 Ç Ç Ç Ç ...

Page 15

... PIN 1. DRAIN 2. GATE 3. SOURCE CASE 1337 - 03 ISSUE 272- 2 PLASTIC MRF6S9060NBR1(MBR1) MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 DRAIN ID É É É É É É É É É É É É É É É PIN 3 É É É É É É É É É É ...

Page 16

... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 Document Number: MRF6S9060 Rev. 1, 6/2005 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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