MRF6V13250HSR3 Freescale Semiconductor, MRF6V13250HSR3 Datasheet

no-image

MRF6V13250HSR3

Manufacturer Part Number
MRF6V13250HSR3
Description
RF Power Field Effect Transistors
Manufacturer
Freescale Semiconductor
Datasheet
www.DataSheet4U.net
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These devices are suitable for use in pulsed and CW applications.
• Typical Performance: V
• Typical Performance: V
• Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz
• CW Capable
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 V
• Characterized from 20 V to 50 V for Extended Power Range
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Total Device Dissipation @ T
Thermal Resistance, Junction to Case
RF Power transistors designed for applications operating at 1300 MHz.
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
at all Phase Angles
Operation
For R5 Tape and Reel options, see p. 12.
• 250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec
Derate above 25°C
Pulsed: Case Temperature 65°C, 250 W Pulsed, 200 μsec Pulse Width, 10% Duty
CW: Case Temperature 77°C, 235 W CW, 50 Vdc, I
Pulsed (200 μsec,
calculators by product.
Select Documentation/Application Notes -- AN1955.
10% Duty Cycle)
Cycle, 50 Vdc, I
Signal Type
Signal Type
CW
DQ
= 100 mA, 1300 MHz
250 Peak
DD
DD
230 CW
C
P
P
(W)
(W)
out
out
= 25°C
= 50 Volts, I
= 50 Volts, I
(1,2)
Characteristic
Rating
DD
(MHz)
(MHz)
1300
1300
Operation
DQ
DQ
f
f
= 100 mA
= 10 mA, T
DQ
(dB)
22.7
(dB)
21.0
G
G
= 10 mA, 1300 MHz
ps
ps
C
= 25
57.0
55.0
(%)
(%)
η
η
D
°C
D
(dB)
(dB)
IRL
IRL
--18
--17
Symbol
Symbol
V
R
Z
V
T
P
T
DSS
T
θJC
θJC
GS
stg
Document Number: MRF6V13250H
C
D
J
CASE 465- -06, STYLE 1
MRF6V13250HR3 MRF6V13250HSR3
CASE 465A- -06, STYLE 1
MRF6V13250HSR3
MRF6V13250HR3
MRF6V13250HR3
MRF6V13250HSR3
LATERAL N- -CHANNEL
1300 MHz, 250 W, 50 V
RF POWER MOSFETs
NI- -780
NI- -780S
-- 65 to +150
--0.5, +120
Value
--6.0, +10
Value
2.38
0.07
0.42
150
225
476
(2,3)
Rev. 0, 6/2011
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

Related parts for MRF6V13250HSR3

MRF6V13250HSR3 Summary of contents

Page 1

... CASE 465- -06, STYLE 1 NI- -780 MRF6V13250HR3 CASE 465A- -06, STYLE 1 NI- -780S MRF6V13250HSR3 Symbol Value Unit V --0.5, +120 Vdc DSS V --6.0, +10 Vdc +150 °C stg T 150 ° 225 ° 476 W D 2.38 W/°C (2,3) Symbol Value Unit °C/W Z 0.07 θJC R 0.42 θJC MRF6V13250HR3 MRF6V13250HSR3 1 ...

Page 2

... Power Gain Drain Efficiency Input Return Loss Load Mismatch (In Freescale Application Test Fixture, 50 ohm system 1300 MHz, Pulsed, 200 μsec Pulse Width, 10% Duty Cycle VSWR 10:1 at all Phase Angles 1. Part internally input matched. MRF6V13250HR3 MRF6V13250HSR3 2 = 25°C unless otherwise noted) A Symbol I GSS ...

Page 3

... Microstrip 0.500″ x 0.111″ Microstrip 0.291″ x 0.063″ Microstrip 0.105″ x 0.388″ Microstrip 0.854″ x 0.052″ Microstrip Part Number Manufacturer Kemet AVX ATC ATC ATC ATC ATC Multicomp Vishay Rogers MRF6V13250HR3 MRF6V13250HSR3 V SUPPLY RF V SUPPLY 3 ...

Page 4

... Figure 2. MRF6V13250HR3(HSR3) Test Circuit Component Layout — 1300 MHz MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250H/HS Rev C11 C12 C8 C10 C6 C17 C15 C18 C13 C16 C14 RF Device Data Freescale Semiconductor ...

Page 5

... P , OUTPUT POWER (WATTS) PULSED out Figure 6. Pulsed Power Gain versus Output Power --30_C G ps 85_C η D 25_C 10 100 P , OUTPUT POWER (WATTS) PULSED out versus Output Power MRF6V13250HR3 MRF6V13250HSR3 Ideal Actual 350 400 500 5 ...

Page 6

... This above graph displays calculated MTTF in hours when the device is operated at V MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature — CW MRF6V13250HR3 MRF6V13250HSR3 6 TYPICAL CHARACTERISTICS — η Vdc ...

Page 7

... W Peak DD DQ out f Z source MHz Ω 1300 5.32 + j4.11 1.17 + j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Under Matching Test Network Z Z source load Z load Ω Output Matching Network MRF6V13250HR3 MRF6V13250HSR3 7 ...

Page 8

... MRF6V13250HR3 MRF6V13250HSR3 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor MRF6V13250HR3 MRF6V13250HSR3 9 ...

Page 10

... MRF6V13250HR3 MRF6V13250HSR3 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF6V13250HR3 MRF6V13250HSR3 11 ...

Page 12

... MRF6V13250H and MRF6V13250HS in the R3 tape and reel option. The following table summarizes revisions to this document. Revision Date 0 June 2011 • Initial Release of Data Sheet MRF6V13250HR3 MRF6V13250HSR3 12 R5 TAPE AND REEL OPTION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 13

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF6V13250HR3 MRF6V13250HSR3 13 ...

Related keywords