MRF9011LT1 Motorola, MRF9011LT1 Datasheet

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MRF9011LT1

Manufacturer Part Number
MRF9011LT1
Description
NPN Silicon High-Frequency Transistor
Manufacturer
Motorola
Datasheet
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
operation up to 2.5 GHz. Also usable in applications requiring fast switching
times.
NOTE:
REV 8
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
Motorola, Inc. 1997
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Power Dissipation @ T C = 75 C (1)
Storage Temperature Range
Maximum Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
MRF9011LT1 = 01
Designed primarily for use in high–gain, low–noise small–signal amplifiers for
High Current–Gain — Bandwidth Product
Low Noise Figure @ f = 1.0 GHz —
High Power Gain —
Guaranteed RF Parameters (MRF9011LT1)
Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance
Available in tape and reel packaging options:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Derate above 25 C
MRF9011LT1, MMBR901LT1, T3
NF (matched) = 1.8 dB (Typ) (MRF9011LT1)
NF (matched)
G pe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1)
G pe(matched)
Lower Package Parasitics
High Gain
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
= 1.9 dB (Typ) (MMBR901LT1, T3)
= 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)
MMBR901LT1, T3 = 7A
Characteristic
Rating
MMBR901LT1, T3;
MRF9011LT1
All
P D(max)
Symbol
T J(max)
Symbol
V CEO
V CBO
V EBO
R JC
T stg
T stg
I C
MMBR901L T1, T3
LOW PROFILE, MMBR901LT1, T3
MRF9011L T1
LOW PROFILE, MRF9011LT1
MMBR901LT1, T3 MRF9011LT1
CASE 318A–05, STYLE 1
CASE 318–08, STYLE 6
SURFACE MOUNTED
HIGH–FREQUENCY
– 55 to +150
TRANSISTOR
NPN SILICON
I C = 30 mA
Value
0.300
SOT–143
4.00
Max
SOT–23
150
150
200
2.0
15
25
30
Order this document
by MMBR901LT1/D
mW/ C
mAdc
Unit
Watt
Unit
Vdc
Vdc
Vdc
C/W
C
C
C
2–1

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MRF9011LT1 Summary of contents

Page 1

... Low Noise Figure @ f = 1.0 GHz — NF (matched) = 1.8 dB (Typ) (MRF9011LT1) NF (matched) = 1.9 dB (Typ) (MMBR901LT1, T3) High Power Gain — www.DataSheet4U.com G pe(matched) = 13.5 dB (Typ 1.0 GHz (MRF9011LT1) G pe(matched) = 12.0 dB (Typ 1.0 GHz (MMBR901LT1, T3) Guaranteed RF Parameters (MRF9011LT1) Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance Lower Package Parasitics High Gain ...

Page 2

... CE = 6.0 Vdc 5.0 mA 1.0 GHz Vdc 5.0 mA 1.0 GHz) SMALL–SIGNAL CHARACTERISTICS Output Capacitance ( Vdc 5.0 mAdc 1.0 GHz) Common–Emitter Amplifier Gain ( 6.0 Vdc 5.0 mAdc 1.0 GHz) MMBR901LT1, T3 MRF9011LT1 2– unless otherwise noted) Characteristic MMBR901LT1, T3 MRF9011LT1 MRF9011LT1 ...

Page 3

... Collector–Base Voltage RF INPUT MOTOROLA RF DEVICE DATA MRF9011LT1 MHz *BIAS **SLUG TUNER TEE Figure 3. MRF9011LT1 Functional Circuit Schematic Vdc GHz OHMS NF 4 CIRCUIT USED IS HP 11608A ...

Page 4

... FREQUENCY (GHz) Figure 4. Gain and Noise Figure versus Frequency Vdc OHMS COLLECTOR CURRENT (mA) Figure 6. Gain–Bandwidth Product versus Collector Current MMBR901LT1, T3 MRF9011LT1 2–4 MRF9011LT1 Vdc 0.5 ...

Page 5

... Table 1. MRF9011LT1 Common Emitter S–Parameters 153 0.03 65 0.93 134 0.05 54 0.80 102 0.08 35 0.55 77 0.08 33 0.45 47 0.11 46 0.47 145 0.03 62 0.87 123 0.04 49 0.67 94 0.06 38 0.44 73 ...

Page 6

... MMBR901LT1, T3 MRF9011LT1 2–6 PACKAGE DIMENSIONS CASE 318–08 ISSUE AF MMBR901LT1 CASE 318A–05 ISSUE R MRF9011LT1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...

Page 7

... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MMBR901LT1, T3 MRF9011LT1 MMBR901LT1/D 2–7 ...

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