MRF9745T1 Motorola, MRF9745T1 Datasheet

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MRF9745T1

Manufacturer Part Number
MRF9745T1
Description
HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
The RF Small Signal Line
Silicon Lateral FET
N–Channel Enhancement–Mode MOSFET
analog and digital cellular radios and PC RF modems.
REV 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1 M )
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ T C = 50 C
Storage Temperature Range
Operating Temperature Range
Thermal Resistance, Junction to Case
Drain–Source Leakage Current
Gate–Source Leakage Current
Designed for use in low voltage, moderate power amplifiers such as portable
Motorola, Inc. 1997
Performance Specifications at 5.8 V, 900 MHz:
Guaranteed Ruggedness at Load VSWR = 20:1
New Plastic Surface Mount Package
Available in Tape and Reel Packaging.
T1 Suffix = 1,000 Units per 8 mm, 7 inch Reel
Device Marking = 9745
Derate above 50 C
(V DS = 35 V, V GS = 0)
(V GS = 5 V, V DS = 0)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power = 30 dBm Min
Power Gain = 10 dB Typ
Efficiency = 50% Min
Characteristic
Characteristic
Rating
(T C = 25 C unless otherwise noted)
Symbol
I DSS
I GSS
Symbol
Symbol
V DGO
V DSS
R JC
V GS
T stg
Min
P D
T J
I D
MRF9745T1
POWER TRANSISTOR
CASE 449–02, STYLE 1
Typ
HIGH FREQUENCY
30 dBm, 900 MHz
– 65 to +150
LDMOS FET
Value
Max
100
150
35
25
10
10
2
(PLD–1)
10
Max
Order this document
10
1
by MRF9745T1/D
MRF9745T1
mW/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
Adc
Adc
W
C
C
1

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MRF9745T1 Summary of contents

Page 1

... V DGO 100 T stg – +150 T J 150 Symbol Max Symbol Min Typ Max I DSS – – GSS – – by MRF9745T1/D Unit Vdc Vdc Vdc Adc W mW Unit C/W Unit Adc 1 Adc MRF9745T1 1 ...

Page 2

... DD = 5.8 Vdc dBm 150 mA 900 MHz) Drain Efficiency ( 5.8 Vdc dBm 150 mA 900 MHz) Ruggedness Test ( 5.8 Vdc dBm 150 mA 900 MHz, Load VSWR = 20:1, All Phase Angles at Frequency Test) MRF9745T1 unless otherwise noted) Symbol Min V GS(th) ...

Page 3

... L 0.253 0.263 6.43 6. REF 5 REF N 1.75 REF 4.44 REF P 0.000 0.006 0.00 0.15 Q 0.120 0.130 3.05 3.30 R 0.220 0.230 5.59 5.84 S 0.030 0.038 0.76 0.97 T 0.050 0.060 1.27 1.52 U 0.000 0.018 0.00 0.46 V 0.000 0.014 0.00 0.36 W 0.004 0.016 0.10 0.41 X 0.131 0.141 3.33 3.58 Y 0.065 0.075 1.65 1.90 Z 0.089 0.099 2.26 2.51 AA 0.056 0.066 1.42 1.67 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4. SOURCE MRF9745T1 3 ...

Page 4

... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MOTOROLA RF DEVICE DATA MRF9745T1/D ...

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