TIPL760C Bourns, Inc., TIPL760C Datasheet

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TIPL760C

Manufacturer Part Number
TIPL760C
Description
Npn Silicon Power Transistors
Manufacturer
Bourns, Inc.
Datasheet
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-base voltage (I
Collector-emitter voltage (V
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
R O D U C T
Rugged Triple-Diffused Planar Construction
4 A Continuous Collector Current
Operating Characteristics Fully Guaranteed
at 100°C
1200 Volt Blocking Capability
75 W at 25°C Case Temperature
1: This value applies for t
E
= 0)
B
I N F O R M A T I O N
BE
= 0)
= 0)
p
≤ 10 ms, duty cycle ≤ 2%.
RATING
C
E
B
Pin 2 is in electrical contact with the mounting base.
NPN SILICON POWER TRANSISTORS
TIPL760B
TIPL760C
TIPL760B
TIPL760C
TIPL760B
TIPL760C
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
V
V
V
V
T
I
P
CBO
CES
CEO
EBO
CM
I
T
C
stg
tot
j
1
2
3
TIPL760B, TIPL760C
-65 to +150
-65 to +150
VALUE
1100
1200
1100
1200
500
550
10
75
4
8
MDTRACA
UNIT
°C
°C
W
V
V
V
V
A
A
1

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TIPL760C Summary of contents

Page 1

... MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS Pin electrical contact with the mounting base. RATING TIPL760B TIPL760C TIPL760B TIPL760C TIPL760B TIPL760C TIPL760B, TIPL760C TO-220 PACKAGE (TOP VIEW MDTRACA SYMBOL VALUE UNIT 1100 V V CBO ...

Page 2

... TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter CEO(sus) C sustaining voltage V = 1100 V CE Collector-emitter V = 1200 CES cut-off current V = 1100 1200 V CE Collector cut-off V = 500 CEO current V = 550 V CE ...

Page 3

... TUT 1 k Ω +5V 5X BY205-400 1 k Ω 2N2904 D44H11 47 Ω V 100 Ω A (90%) C 90% B 10% D (90%) E (10%) F (2%) TIPL760B, TIPL760C +5V (on) µH 180 v cc BY205-400 V clamp = 400 V BE(off) Base Current Collector Voltage Collector Current > 10 Ω, C < 15 ns, R < 11.5 pF ...

Page 4

... TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 100 10 1·0 0·1 1· Collector Current - A C Figure 3. BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1· 25°C C 1·15 1·05 0·95 0·85 0·75 0 0·2 0·4 0·6 0· Base Current - A B Figure 5 ...

Page 5

... POWER PULSE DURATION 1·0 50% 20% 10% 0· duty cycle = t1/t2 Read time at end of t1 · J(max) C D(peak Power Pulse Duration - s Figure 8. TIPL760B, TIPL760C SAP741AF 1000 TCP741AM t1 t2 θJC · R θJC(max) θ ...

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