TIP31CE3 Cystech Electonics Corp., TIP31CE3 Datasheet
TIP31CE3
Related parts for TIP31CE3
TIP31CE3 Summary of contents
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... NPN Epitaxial Planar Power Transistor TIP31CE3 Description TIP31CE3 is designed for use in general purpose amplifier and switching applications. Features Low collector-emitter saturation voltage, V High collector-emitter sustaining voltage High current gain-bandwidth product , f Symbol TIP31CE3 B：Base C：Collector E：Emitter Absolute Maximum Ratings Parameter Collector-Base Voltage ...
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... Characteristics (Ta=25 C) Symbol Min. *BV 100 CEO(SUS CEO I - CES I - EBO *V - CE(sat BE(on TIP31CE3 CYStech Electronics Corp. Typ. Max. Unit - - V - 300 µA - 200 µ 1 1 MHz Spec. No. : C609E3 Issued Date : 2003.09.04 Revised Date : Page No. : 2/4 Test Conditions I =30mA ...
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... Collector Current---I ON Voltage vs Collector Current 10000 1000 100 1 10 100 Collector Current---I Power Derating Curve 2.5 2 1 100 Ambient Temperature---T TIP31CE3 CYStech Electronics Corp. 10000 VCE=4V 1000 VCE=2V 1000 10000 (mA) C VCE=2V 1000 10000 (mA) C 150 200 (℃) A Spec. No. : C609E3 Issued Date : 2003 ...
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... All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. TIP31CE3 CYStech Electronics Corp ...