K1358 Toshiba Semiconductor, K1358 Datasheet
K1358
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K1358 Summary of contents
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... This transistor is an electrostatic sensitive device. Please handle with care. TOSHIBA CORPORATION = 720V DS = 1mA D SYMBOL RATING UNIT V 900 V DSS V 900 V DGR GSS 150 150 -55 ~ 150 C stg SYMBOL MAX. UNIT R 0.833 C/W th(ch- C/W th(ch-a) 2SK1358 Unit in mm Industrial Applications 1/6 ...
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... Electrical Characteristics ( CHARACTERISTIC SYMBOL Gate Leakage Current I GSS Drain Cut-off Current I DSS Drain-Source Breakdown Voltage V (BR) DSS Gate Threshold Voltage V Drain-Source ON Resistance R DS (ON) Forward Transfer Admittance Y Input Capacitance C iss Reverse Transfer Capacitance C rss www.DataSheet4U.com Output Capacitance C oss Rise Time ...
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... TOSHIBA CORPORATION 2SK1358 3/6 ...
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... TOSHIBA CORPORATION ...
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... TOSHIBA CORPORATION 2SK1358 5/6 ...
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... The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (offi ...