HS-OP470AR Intersil Corporation, HS-OP470AR Datasheet - Page 2

• Manufacturer Part Number: HS-OP470AR
• Description: Radiation Hardened/ Very Low Noise Quad Operational Amplifier
• Manufacturer: Intersil Corporation

Metallization Mask Layout
DIE DIMENSIONS:
METALLIZATION:
SUBSTRATE POTENTIAL (Powered Up):
BACKSIDE FINISH:
Silicon
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: [phone]
FAX: [phone]
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
95 mils x 99 mils x 19 mils 1 mil
(2420 m x 2530 m x 483 m 25.4 m)
Type: Al, 1% Cu
Thickness: 16k
Unbiased
Å
OUT2
OUT3
-IN2
-IN3
2k
Å
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
+IN3
+IN2
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: [phone]
FAX: [phone]
HS-OP470ARH
V+
V-
2
PASSIVATION:
WORST CASE CURRENT DENSITY:
TRANSISTOR COUNT:
PROCESS:
Type: Nitride (SI3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
Nitride Thickness: 3.5k
<2.0 x 10
175
Bipolar Dielectric Isolation
5
A/cm
2
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: [phone]
FAX: [phone]
Å
+IN1
+IN4
Å
2k
Å
1.5k
Å
-IN1
OUT1
OUT4
-IN4