BZV55-C16 General Semiconductor, BZV55-C16 Datasheet

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BZV55-C16

Manufacturer Part Number
BZV55-C16
Description
ZENER DIODES
Manufacturer
General Semiconductor
Datasheets

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9/29/98
Ratings at 25°C ambient temperature unless otherwise specified.
Zener Current see Table “Characteristics”
Power Dissipation at T
Power Dissipation at T
Junction Temperature
Storage Temperature Range
Continuous Forward Current
Peak reverse power disipation (non-repetitive) tp=100 s
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Lead
Forward Voltage at I
NOTES:
1) Mounted on ceramic substrate 10mm x 10mm x 0.6mm
2) Tj = 150°C
Dimensions are in inches and (millimeters)
F
= 10 mA
flange
A
= 50°C
Cathode Mark
Mini-MELF
.142 (3.6)
.134 (3.4)
= 50°C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.019 (0.48)
.011 (0.28)
BZV55 SERIES
ZENER DIODES
SYMBOL
R
R
Silicon Planar Power Zener Diodes
For use as low voltage stabilizer or
voltage reference.
The Zener voltages are graded according to the
international E 24 standard. Higher Zener voltages
and 1% tolerance available on request.
Diodes available in these tolerance series:
±
Case: Mini-MELF Glass Case (SOD-80)
Weight: approx. 0.05 g
Cathode band color: Blue
V
thJA
thJL
2% BZV55-B,
F
SYMBOL
P
P
T
T
I
P
F
j
S
tot
tot
ZSM
MIN.
±
MECHANICAL DATA
3% BZV55-F,
FEATURES
TYP.
–65 to +200
–65 to +200
VALUE
400
30
500
250
±
(2)
(1)
5% BZV55-C.
0.38
MAX.
0.30
0.9
(1)
K/mW
K/mW
UNIT
mW
mW
°C
°C
mA
W
UNIT
V

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