BCR08DS-14A Renesas Electronics Corporation., BCR08DS-14A Datasheet - Page 2

• Manufacturer Part Number: BCR08DS-14A
• Description: Triac Low Power Use
• Manufacturer: Renesas Electronics Corporation.

BCR08DS-14A
Electrical Characteristics
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
1. Junction temperature
2. Rate of decay of on-state commutating current
3. Peak off-state voltage
Tj = 125°C
(di/dt)c = –0.4 A/ms
V
D
3. Case temperature is measured on the T2 tab..
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
= 400 V
Parameter
Note2
Note2
Note4
Test conditions






Symbol
(dv/dt)c
V
R
I
V
V
I
I
I
RGT 
V
V
RGT 
RGT 
DRM
FGT 
th (j-c)
RGT 
FGT 
TM
GD
Min.
0.2
0.5
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
Commutating voltage and current waveforms
Max.
1.0
2.0
2.0
2.0
2.0
25
—
—
5
5
5
Supply Voltage
Main Voltage
Main Current
°C/W
Unit
V/s
mA
mA
mA
mA
(inductive load)
(dv/dt)c
V
V
V
V
V
Tj = 125°C, V
Tc = 25°C, I
Instantaneous measurement
Tj = 25°C, V
R
Tj = 25°C, V
R
Tj = 125°C, V
Junction to case
Tj = 125°C
G
G
= 330 
= 330 
Test conditions
(di/dt)c
TM
D
D
DRM
D
= 6 V, R
= 6 V, R
Time
Time
Time
V
= 1.2 A,
= 1/2 V
D
Note3
Preliminary
applied
Page 2 of 6
L
L
DRM
= 6 ,
= 6 ,