MMFT1N10 Motorola, MMFT1N10 Datasheet

no-image

MMFT1N10

Manufacturer Part Number
MMFT1N10
Description
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS
Manufacturer
Motorola
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMFT1N10ET3
Manufacturer:
ON
Quantity:
56 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Medium Power Field Effect Transistor
N–Channel Enhancement Mode
Silicon Gate TMOS E–FET
SOT–223 for Surface Mount
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient device also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
dc–dc converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT–223 package which is designed for medium
power surface mount applications.
(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
MAXIMUM RATINGS
DEVICE MARKING
THERMAL CHARACTERISTICS
Motorola TMOS Power MOSFET Transistor Device Data
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous
Drain Current
Total Power Dissipation @ T A = 25 C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
1N10
Thermal Resistance — Junction–to–Ambient (surface mounted)
Maximum Temperature for Soldering Purposes,
This advanced E–FET is a TMOS Medium Power MOSFET
Motorola, Inc. 1995
Silicon Gate for Fast Switching Speeds
Low R DS(on) — 0.25
The SOT–223 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
Use MMFT1N10ET1 to order the 7 inch/1000 unit reel.
Use MMFT1N10ET3 to order the 13 inch/4000 unit reel.
Derate above 25 C
(V DD = 60 V, V GS = 10 V, Peak I L = 1 A, L = 0.2 mH, R G = 25 )
Time in Solder Bath
— Pulsed
(T A = 25 C unless otherwise noted)
max
Rating
t
G
1
D
2,4
Symbol
T J , T stg
3
P D (1)
R JA
V DS
V GS
E AS
I DM
T L
S
I D
– 65 to 150
MMFT1N10E
CASE 318E–04, STYLE 3
R DS(on) = 0.25 OHM
Value
Motorola Preferred Device
100
168
156
260
MEDIUM POWER
0.8
6.4
10
20
1
4
1
100 VOLTS
TMOS FET
TO–261AA
Order this document
2
1 AMP
by MMFT1N10E/D
3
mW/ C
Watts
4
Unit
Vdc
Vdc
Adc
Sec
C/W
mJ
C
C
1

Related parts for MMFT1N10

MMFT1N10 Summary of contents

Page 1

... The Formed Leads Absorb Thermal Stress During Sol- dering, Eliminating the Possibility of Damage to the Die Available Tape and Reel Use MMFT1N10ET1 to order the 7 inch/1000 unit reel. Use MMFT1N10ET3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS ( unless otherwise noted) Rating Drain– ...

Page 2

... MMFT1N10E ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage 250 A) Zero Gate Voltage Drain Current 100 Gate–Body Leakage Current CHARACTERISTICS Gate Threshold Voltage mA) Static Drain– ...

Page 3

... Figure 4. On–Resistance versus Drain Current 0 0.4 0.3 0.2 0 – 50 Figure 6. On–Resistance versus Junction MMFT1N10E 1 100 150 JUNCTION TEMP ( C) With Temperature 100 – DRAIN CURRENT (AMPS ...

Page 4

... MMFT1N10E FORWARD BIASED SAFE OPERATING AREA The FBSOA curves define the maximum drain–to–source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include the limitations of simultaneous high voltage and high current the rating of the device, they are especially useful to designers of linear systems ...

Page 5

... STRESS AREA Figure 9. Commutating Waveforms – 120 140 Figure 11. Commutating Safe Operating Area BV DSS Figure 13. Unclamped Inductive Switching MMFT1N10E R GS DUT – 80% OF RATED V DSS V dsL = /dt Test Circuit ...

Page 6

... MMFT1N10E 1400 1200 1000 800 600 400 200 Figure 15. Gate Charge versus Gate–To–Source Voltage iss C oss C rss C rss GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 14. Capacitance Variation With Voltage ...

Page 7

... Area for the SOT–223 Package (Typical) Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. MMFT1N10E 0.8 Watts 1.25 Watts* 1.5 Watts ...

Page 8

... MMFT1N10E Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure ...

Page 9

... H Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 318E–04 TO–261AA SOT–223 ISSUE H MMFT1N10E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.249 0.263 6 ...

Page 10

... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *MMFT1N10E/D* Motorola TMOS Power MOSFET Transistor Device Data MMFT1N10E/D ...

Related keywords