MMFT3055VL Motorola, MMFT3055VL Datasheet

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MMFT3055VL

Manufacturer Part Number
MMFT3055VL
Description
TMOS POWER FET 1.5 AMPERES 60 VOLT
Manufacturer
Motorola
Datasheet

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Part Number:
MMFT3055VL
Manufacturer:
ON
Quantity:
10 488
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
TMOS V
SOT-223 for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
tance area product about one–half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V
Features Common to TMOS V and TMOS E–FETS
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s, and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 1
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 M )
Gate–to–Source Voltage – Continuous
Gate–to–Source Voltage
Drain Current – Continuous
Drain Current
Drain Current
Total PD @ T A = 25 C mounted on 1” sq. Drain pad on FR–4 bd material
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting T J = 25 C
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
TMOS V is a new technology designed to achieve an on–resis-
On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low R DS(on) Technology
Faster Switching than E–FET Predecessors
Avalanche Energy Specified
I DSS and V DS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and TMOS E–FET
Available in 12 mm Tape & Reel
Use MMFT3055VLT1 to order the 7 inch/1000 unit reel
Use MMFT3055VLT3 to order the 13 inch/4000 unit reel
Total PD @ T A = 25 C mounted on 0.70” sq. Drain pad on FR–4 bd material
Total PD @ T A = 25 C mounted on min. Drain pad on FR–4 bd material
Derate above 25 C
(V DD = 25 Vdc, V GS = 5.0 Vdc, Peak I L = 3.4 Apk, L = 10 mH, R G = 25
– Junction to Ambient on 1” sq. Drain pad on FR–4 bd material
– Junction to Ambient on 0.70” sq. Drain pad on FR–4 bd material
– Junction to Ambient on min. Drain pad on FR–4 bd material
– Continuous @ 100 C
– Single Pulse (t p
(T C = 25 C unless otherwise noted)
– Non–repetitive (t p
Data Sheet
10 s)
Rating
10 ms)
)
G
D
S
TM
Symbol
T J , T stg
V GSM
V DGR
V DSS
R JA
R JA
R JA
V GS
E AS
I DM
P D
T L
I D
I D
MMFT3055VL
R DS(on) = 0.140 OHM
CASE 318E–04, Style 3
TMOS POWER FET
1
– 55 to 175
1.5 AMPERES
2
Value
60 VOLTS
TO–261AA
0.94
159
260
1.5
1.2
5.0
2.1
1.7
6.3
Order this document
60
60
58
70
88
15
20
3
by MMFT3055VL/D
4
mW/ C
Watts
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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MMFT3055VL Summary of contents

Page 1

... I DSS and V DS(on) Specified at Elevated Temperature Static Parameters are the Same for both TMOS V and TMOS E–FET Available Tape & Reel Use MMFT3055VLT1 to order the 7 inch/1000 unit reel Use MMFT3055VLT3 to order the 13 inch/4000 unit reel MAXIMUM RATINGS ( unless otherwise noted) Drain– ...

Page 2

... MMFT3055VL ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc Vdc 150 C) Gate–Body Leakage Current ( ...

Page 3

... Figure 4. On–Resistance versus Drain Current 1000 100 10 1 175 125 150 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage MMFT3055VL 100 C 1.5 2 2.5 3 3.5 4 4.5 5 5 1.5 2 2 DRAIN CURRENT (AMPS) ...

Page 4

... MMFT3055VL Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... DM ), the energy rating is specified at rated continuous cur- rent ( accordance with industry custom. The energy rat- ing must be derated for temperature as shown in the accompanying graph (Figure 13). Maximum energy at cur- rents below rated continuous I D can safely be assumed to equal the values indicated. MMFT3055VL t d(off d(on) 10 ...

Page 6

... MMFT3055VL SINGLE PULSE 100 ms 500 ms 0 DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE 0.0001 1.0E–05 1.0E–04 1.0E–03 Figure 14. Diode Reverse Recovery Waveform ...

Page 7

... Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. MMFT3055VL mm Board Material = 0.0625 G–10/FR– Copper ...

Page 8

... MMFT3055VL Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure ...

Page 9

... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 140 C (DEPENDING ON 100 C MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 16. Typical Solder Heating Profile MMFT3055VL STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX 9 ...

Page 10

... DIM MIN MAX MIN MAX A 0.249 0.263 6.30 6.70 B 0.130 0.145 3.30 3.70 C 0.060 0.068 1.50 1.75 D 0.024 0.035 0.60 0.89 F 0.115 0.126 2.90 3.20 G 0.087 0.094 2.20 2.40 H 0.0008 0.0040 0.020 0.100 J 0.009 0.014 0.24 0.35 K 0.060 0.078 1.50 2.00 L 0.033 0.041 0.85 1. 0.264 0.287 6.70 7.30 STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MMFT3055VL/D ...

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