TPC6001 Toshiba Semiconductor, TPC6001 Datasheet

no-image

TPC6001

Manufacturer Part Number
TPC6001
Description
Notebook PC Applications Portable Equipment Applications
Manufacturer
Toshiba Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TPC6001
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
TPC6001
Manufacturer:
TOSHIBA
Quantity:
10 000
Part Number:
TPC6001
Manufacturer:
TOSHIBA
Quantity:
12 180
Part Number:
TPC6001 TE85L
Manufacturer:
TOSHIBA
Quantity:
3 000
Notebook PC Applications
Portable Equipment Applications
Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Thermal resistance, channel to ambient
(t = 5 s)
Thermal resistance, channel to ambient
(t = 5 s)
Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle it with caution.
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Characteristics
GS
DC
Pulse (Note 1)
= 20 kΩ)
(Ta = 25°C)
DSS
th
(Note 2a)
(Note 2b)
= 0.5 to 1.2 V (V
(Note 1)
(Note 3)
(t = 5 s)
(t = 5 s)
= 10 µA (max) (V
(Note 2a)
(Note 2b)
DS (ON)
Symbol
V
V
V
E
E
T
fs
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
AR
stg
D
AS
ch
| = 15 S (typ.)
D
D
TPC6001
DS
= 22 mΩ (typ.)
R
R
Symbol
DS
th (ch-a)
th (ch-a)
= 10 V, I
= 20 V)
−55 to 150
Rating
0.22
±12
150
2.2
0.7
5.8
20
20
24
D
6
3
1
= 200 µA)
178.5
Max
56.8
°C/W
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.011 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
6
1
5
2
2-3T1A
2004-07-06
TPC6001
4
3
Unit: mm

Related parts for TPC6001

TPC6001 Summary of contents

Page 1

... 150 °C ch −55 to 150 T °C stg Symbol Max Unit R 56.8 °C/W th (ch-a) R 178.5 °C/W th (ch-a) 1 TPC6001 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Circuit Configuration 2004-07-06 ...

Page 2

... off Duty < µ ∼ − TPC6001 Min Typ. Max Unit ⎯ ⎯ ±10 µA ⎯ ⎯ µA 10 ⎯ ⎯ ⎯ ⎯ 8 ⎯ 0.5 1.2 V ⎯ ⎯ ...

Page 3

... Note 5: . • on lower left of the marking indicates Pin 1. (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF DR GS (b) Device mounted on a glass-epoxy board (b) FR-4 Unit: (mm) ( Ω 3 TPC6001 Min Typ. Max Unit ⎯ ⎯ ⎯ ⎯ −1.2 V FR-4 25.4 × 25.4 × 0.8 Unit: (mm) 2004-07-06 ...

Page 4

... Gate-source voltage (ON) 100 0.1 0.3 1 100 Drain current I D (A) 4 TPC6001 – Common source Ta = 25°C Pulse test 2 1.8 1 – Common source Ta = 25°C Pulse test – I ...

Page 5

... 25°C Pulse test 160 Total gate charge Q g (nC) 5 TPC6001 – Common source Ta = 25°C Pulse test −0.6 −0.8 −1 −1.2 V – Common source 200 µA ...

Page 6

... Single pulse Ta = 25°C Curves must be derated 0.03 linearly with increase in V DSS max temperature 0.01 0.01 0.03 0.1 0 Drain-source voltage V DS (V) − Device mounted on a glass- epoxy board (a) (Note 2a) Single pulse 0 100 Pulse t w (s) 100 6 TPC6001 1000 2004-07-06 ...

Page 7

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 TPC6001 030619EAA 2004-07-06 ...

Related keywords