TPC6002 Toshiba Semiconductor, TPC6002 Datasheet

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TPC6002

Manufacturer Part Number
TPC6002
Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Manufacturer
Toshiba Semiconductor
Datasheet

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Notebook PC Applications
Portable Equipment Applications
·
·
·
·
Maximum Ratings
Thermal Characteristics
This transistor is an electrostatically sensitive device. Please handle it
with caution.
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement-model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Thermal resistance, channel to ambient
(t = 5 s)
Thermal resistance, channel to ambient
(t = 5 s)
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Characteristics
GS
= 20 kW)
(Ta = = = = 25°C)
DSS
th
DC
Pulse
(Note 2a)
(Note 2b)
= 1.3 to 2.5 V (V
(Note 1)
(Note 1)
(Note 4)
(t = 5 s)
(t = 5 s)
= 10 µA (max) (V
(Note 2a)
(Note 2b)
DS (ON)
Symbol
V
fs
V
V
E
E
T
I
I
T
DGR
P
P
GSS
DSS
| = 10 S (typ.)
I
DP
AR
AR
stg
AS
D
ch
TPC6002
D
D
DS
= 25 mΩ (typ.)
R
R
DS
Symbol
th (ch-a)
th (ch-a)
= 10 V, I
= 30 V)
-55 to 150
Rating
0.22
±20
150
2.2
0.7
5.8
30
30
24
D
6
3
1
178.5
= 1 mA)
56.8
Max
°C/W
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.011 g (typ.)
Circuit Configuration
Marking
JEDEC
JEITA
TOSHIBA
6
1
(Note 5)
S 2 B
www.DataSheet4U.com
5
2
2-3T1A
2001-11-07
TPC6002
4
3
Unit: mm

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TPC6002 Summary of contents

Page 1

... 0. 150 °C ch -55 to 150 T °C stg Symbol Max Unit R 56.8 °C/W th (ch-a) (Note 2a) R 178.5 °C/W th (ch-a) (Note 2b) 1 TPC6002 www.DataSheet4U.com Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Circuit Configuration Marking (Note 2001-11-07 ...

Page 2

... ( 25°C) Symbol Test Condition I ¾ DRP = DSF DR GS FR-4 25.4 ´ 25.4 ´ 0.8 Unit: (mm TPC6002 www.DataSheet4U.com Min Typ. Max = 0 V ¾ ¾ ±10 ¾ ¾ ¾ ¾ ¾ ¾ 15 ¾ 1.3 2.5 ¾ ¾ ¾ ...

Page 3

... Drain-source voltage V 0.6 0.5 0.4 0.3 0.2 0 Gate-source voltage V 100 Common source Ta = 25°C Pulse test 0.1 0.3 100 3 TPC6002 www.DataSheet4U.com I – 3.2 3.1 10 2.9 2 2.5 V Common source Ta = 25°C Pulse test ( – Common source Ta = 25°C Pulse test ...

Page 4

... Dynamic input/output characteristics 40 Common source 25°C Pulse test 160 0 4 Total gate charge Q 4 TPC6002 www.DataSheet4U.com I – -0.4 -0.6 -0.8 -1 -1.2 ( – Common source ...

Page 5

... Curves must be derated V DSS linearly with increase in max temperature 0.001 0.01 0.03 0.1 0 Drain-source voltage V ( Device mounted on a glass- epoxy board (b) (Note 2b) Device mounted on a glass- epoxy board (a) (Note 2a) 0 Pulse t ( 100 5 TPC6002 www.DataSheet4U.com Single pulse 100 1000 2001-11-07 ...

Page 6

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any in · ellectual property or other rights of TOSHIBA CORPORATION or others. 6 TPC6002 www.DataSheet4U.com 000707EAA 2001-11-07 ...

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