EC103D1-01 NXP Semiconductors, EC103D1-01 Datasheet

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EC103D1-01

Manufacturer Part Number
EC103D1-01
Description
Ec103d1 Sensitive Gate Thyristor
Manufacturer
NXP Semiconductors
Datasheet
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT54 (TO-92), simplified outline and symbol
Description
anode (a)
gate (g)
cathode (k)
M3D186
Very sensitive gate thyristor intended to be interfaced directly to low power gate
trigger circuits, with very low drive current capability.
Product availability:
EC103D1 in SOT54 (TO-92).
EC103D1
Sensitive gate thyristor
Rev. 01 — 1 November 2001
Blocking voltage to 400 V
On-state RMS current to 0.8 A
Ultra low gate trigger current
Low cost package.
Earth leakage circuit breakers
Solid state relays
General purpose switching.
Simplified outline
SOT54 (TO-92)
1
2
3
MSB033
Symbol
1
3
2
MBL308
Product data

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EC103D1-01 Summary of contents

Page 1

... M3D186 1. Description Very sensitive gate thyristor intended to be interfaced directly to low power gate trigger circuits, with very low drive current capability. Product availability: EC103D1 in SOT54 (TO-92). 2. Features Blocking voltage to 400 V On-state RMS current to 0.8 A Ultra low gate trigger current Low cost package. ...

Page 2

... prior to j surge /dt = 100 mA over any 20 ms period Rev. 01 — 1 November 2001 EC103D1 Sensitive gate thyristor Typ Max Unit - 400 V - 400 8.0 A Min Max Unit ...

Page 3

... I T(RMS) (A) 1.5 1.0 0.5 100 150 T lead ( Hz; T Fig 4. Maximum permissible repetitive on-state current (RMS value function of surge duration for sinusoidal currents; typical values. Rev. 01 — 1 November 2001 EC103D1 Sensitive gate thyristor 003aaa110 003aaa117 surge ( lead © ...

Page 4

... Fig 5. Transient thermal impedance from junction to lead as a function of pulse duration. 9397 750 08574 Product data Conditions mounted on a printed circuit board; lead length = Rev. 01 — 1 November 2001 EC103D1 Sensitive gate thyristor Value Unit 80 K/W 150 K/W 003aaa108 ...

Page 5

... TM D DRM(max mA; dI / 125 C; D DRM(max Rev. 01 — 1 November 2001 EC103D1 Sensitive gate thyristor Min Typ Max Unit - 1.2 1. 0.5 0.8 V 0.2 0 ...

Page 6

... Fig 7. Normalized latching current as a function of junction temperature; typical values. 003aaa112 2.0 a 1.6 1.2 0.8 0.4 0 100 150 Fig 9. Normalized gate trigger current as a function of junction temperature; typical values. Rev. 01 — 1 November 2001 EC103D1 Sensitive gate thyristor 003aaa114 - 100 ----------------- - 003aaa113 ...

Page 7

... Product data 2 scale 4.8 1.7 4.2 14.5 2.54 1.27 4.4 1.4 3.6 12.7 REFERENCES JEDEC EIAJ TO-92 SC-43 Rev. 01 — 1 November 2001 EC103D1 Sensitive gate thyristor ( 2.5 EUROPEAN ISSUE DATE PROJECTION 97-02-28 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. SOT54 ...

Page 8

... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20011101 - Product data; initial version 9397 750 08574 Product data Rev. 01 — 1 November 2001 EC103D1 Sensitive gate thyristor © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...

Page 9

... Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Rev. 01 — 1 November 2001 EC103D1 Sensitive gate thyristor © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...

Page 10

... Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 08574 Product data Rev. 01 — 1 November 2001 EC103D1 Sensitive gate thyristor Fax: + 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...

Page 11

... No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 1 November 2001 Document order number: 9397 750 08574 EC103D1 Sensitive gate thyristor ...

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