DS2012SF Dynex Semiconductor, DS2012SF Datasheet

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DS2012SF

Manufacturer Part Number
DS2012SF
Description
Rectifier Diode
Manufacturer
Dynex Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DS2012SF60
Manufacturer:
ABB
Quantity:
50
Replaces September 2001 version, DS4191-4.0
FEATURES
APPLICATIONS
VOLTAGE RATINGS
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2012SF59
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
www.dynexsemi.com
DS2012SF60
DS2012SF59
DS2012SF58
DS2012SF57
DS2012SF56
DS2012SF55
Type Number
Double Side Cooling
High Surge Capability
Rectification
Freewheel Diode
DC Motor Control
Power Supplies
Welding
Battery Chargers
Reverse Voltage
Repetitive Peak
6000
5900
5800
5700
5600
5500
V
RRM
V
V
RSM
Conditions
= V
RRM
+ 100V
KEY PARAMETERS
V
I
I
F(AV)
FSM
RRM
6000V
1320A
16500A
See Package Details for further information.
Fig. 1 Package outline
Outline type code: F
DS4548 -4.1 December 2001
Rectifier Diode
DS2012SF
DS2012SF
1/7

Related parts for DS2012SF

DS2012SF Summary of contents

Page 1

... Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2012SF59 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. www.dynexsemi.com ...

Page 2

... DS2012SF CURRENT RATINGS unless otherwise stated case Symbol Parameter Double Side Cooled I Mean forward current F(AV) I RMS value F(RMS) I Continuous (direct) forward current F Single Side Cooled (Anode side) I Mean forward current F(AV) I RMS value F(RMS) I Continuous (direct) forward current 100 ...

Page 3

... T = 150 C case Conditions dc Double side cooled Anode dc Single side cooled Cathode dc Double side Clamping force 19.5kN with mounting compound Single side Forward (conducting) Reverse (blocking) DS2012SF Max. Units 1.425 Min. Max. ...

Page 4

... DS2012SF CHARACTERISTICS Symbol Parameter V Forward voltage FM I Peak reverse current RRM Q Total stored charge S I Peak recovery current RR V Threshold voltage TO r Slope resistance T CURVES 5000 Measured under pulse conditions 4000 T = 25˚C j 3000 2000 1000 0 0 1.0 Instantaneous forward voltage, V Fig.2 Maximum (limit) forward characteristics ...

Page 5

... 1.00 0.01 0.75 0.50 0.001 0.001 Fig.7 Maximum (limit) transient thermal impedance - 175˚C) DS2012SF 1.0 10 100 /dt - (A/µs) F Anode side cooled Double side cooled Effective thermal resistance Conduction Junction to case ˚C/W Double side Single side d.c. 0.022 0.038 Halfwave 0.024 0.040 3 phase 120˚ ...

Page 6

... DS2012SF PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6x2.0 deep (in both electrodes) Cathode Note: 1. Package maybe supplied with pins and/or tags. 6/7 Ø76 max Ø48 nom Ø ...

Page 7

... Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4191-4 Issue No. 4.1December 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM DS2012SF 7/7 ...

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