R6015ANJ Rohm, R6015ANJ Datasheet

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... Drive Nch MOSFET R6015ANJ Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. ) guaranteed to be ±30V. 3) Gate-source voltage (V GSS 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Switching Packaging specifications Package LPTS Type Code LPTL Basic ordering unit (pieces) Absolute maximum ratings (Ta=25° ...

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... R6015ANJ Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS(th) Static drain-source on-state resistance R DS(on) Forward transfer admittance | Input capacitance iss Output capacitance C oss Reverse transfer capacitance C rss t Turn-on delay time ...

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... R6015ANJ Electrical characteristics curves 100 =100us W Operation in this P =1ms area is limited W 0 DS(ON 10ms 25°C DC operation Single Pulse 0.01 0 100 DRAIN-SOURCE VOLTAGE : Fig.1 Maximum Safe Operating Aera 100 V = 10V DS Pulsed 10 Ta= 125°C Ta= 75°C Ta= 25°C 1 Ta= -25°C ...

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... R6015ANJ 100 Pulsed 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1 0.1 0.01 0 0.5 1 SOURCE-DRAIN VOLTAGE : V SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1000 100 Ta= 25° dt= 100A / µ Pulsed 10 0 REVERSE DRAIN CURRENT : I DR Fig.13 Reverse Recovery Time vs ...

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... R6015ANJ Measurement circuits Fig.1 Switching time measurement circuit I (Const.) G Fig.3 Gate charge measurement circuit Fig.5 Avalanche measurement circuit www.rohm.com 2009 ROHM Co., Ltd. All rights reserved. ○ c Fig.2 Switching waveforms www.DataSheet.co.kr Fig.4 Gate charge waveform Fig.6 Avalanche waveform 5/5 Data Sheet 2009.04 - Rev.A ...

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... ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing ...