BTA208S-SER-B NXP Semiconductors, BTA208S-SER-B Datasheet - Page 2

• Manufacturer Part Number: BTA208S-SER-B
• Description: Bta208s-600b; Bta208s-800b Three-quadrant Triacs High Commutation
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Ordering information
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
9397 750 14861
Product data sheet
Symbol Parameter
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/ s.
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
I
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
Limiting values
t for fusing
BTA208S-600B
BTA208S-800B
Table 2:
Type number
BTA208S-600B
BTA208S-800B
Ordering information
Package
Name
TO-252
BTA208S-600B; BTA208S-800B
Rev. 02 — 31 May 2005
Conditions
full sine wave; T
see
full sine wave; T
see
t = 10 ms
I
over any 20 ms period
TM
Description
plastic single-ended surface mounted package (DPAK);
3 leads (one lead cropped)
t = 20 ms
t = 16.7 ms
= 12 A; I
Figure 4
Figure 2
G
and
and
= 0.2 A; dI
mb
j
= 25 C prior to surge;
5
3
102 C;
Three-quadrant triacs high commutation
G
/dt = 0.2 A/ s
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
40
Max
600
800
8
65
71
21
100
2
5
5
0.5
+150
125
Version
SOT428
Unit
V
V
A
A
A
A
A/ s
A
V
W
W
2 of 13
C
C
2
s