BTA208S-SER-B NXP Semiconductors, BTA208S-SER-B Datasheet - Page 7

• Manufacturer Part Number: BTA208S-SER-B
• Description: Bta208s-600b; Bta208s-800b Three-quadrant Triacs High Commutation
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Dynamic characteristics
Table 6:
T
9397 750 14861
Product data sheet
Symbol Parameter
dV
dI
t
gt
j
Fig 7. Normalized gate trigger voltage as a function of
V
= 25 C unless otherwise specified.
com
GT
D
V
/dt
GT
/dt
(25 C)
(T
1.6
1.2
0.8
0.4
j
)
junction temperature
50
rate of rise of off-state voltage
rate of rise of commutating
current
gate-controlled turn-on time
Dynamic characteristics
0
50
100
T
001aac334
Conditions
V
exponential waveform; gate open circuit
V
without snubber; gate open circuit;
see
I
dI
j
TM
( C)
DM
DM
G
/dt = 5 A/ s
= 12 A; V
Figure 12
= 0.67V
= 400 V; T
150
BTA208S-600B; BTA208S-800B
Rev. 02 — 31 May 2005
DRM(max)
D
= V
j
= 125 C; I
DRM(max)
Fig 8. Normalized gate trigger current as a function of
I
GT
; T
I
GT
(25 C)
(1) T2 G
(2) T2+ G
(3) T2+ G+
j
(T
= 125 C;
j
)
; I
3
2
1
0
T(RMS)
junction temperature
50
G
= 0.1 A;
(1)
(2)
(3)
Three-quadrant triacs high commutation
= 8 A;
0
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
1000 4000 -
-
-
50
Typ
14
2
100
001aac669
T
j
Max
-
-
( C)
150
Unit
V/ s
A/ms
s
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